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Complex dynamical behaviors in modulation-doped GaAs/Al x Ga1 −x As heterostructures

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Abstract

We study dynamics of the forced modulation-doped GaAs/AlGaAs heterostructure devices. The coupled differential equations governing the dynamical behaviors are numerically simulated. Biased with an appropriate dc field, the system exhibits two states: spontaneous current oscillation and fixed points. By imposing an ac driving force, the dynamical system shows frequency locking, quasiperiodicity, and chaos, which are sensitive to the amplitude and frequency of the externally applied periodical microwave field. The basins of attraction of both ordinary attractors and strange attractors are presented.

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Authors and Affiliations

  1. Department of Communication Engineering, Shanghai University, 200072, Shanghai, China

    Li Guohui & Xu Deming

  2. Department of Physics, Shanghai University, 201800, Shanghai, China

    Zhou Shiping

Authors
  1. Li Guohui
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  2. Zhou Shiping
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  3. Xu Deming
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Correspondence to Li Guohui.

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Li, G., Zhou, S. & Xu, D. Complex dynamical behaviors in modulation-doped GaAs/Al x Ga1 −x As heterostructures. Sci China Ser F 44, 412–418 (2001). https://doi.org/10.1007/BF02713944

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  • DOI: https://doi.org/10.1007/BF02713944

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