Skip to main content
Springer Nature Link
Log in

Complex dynamical behaviors in modulation-doped GaAs/Al x Ga1 −x As heterostructures

  • Scientific Papers
  • Published:
Science in China Series : Information Sciences Aims and scope Submit manuscript

Abstract

We study dynamics of the forced modulation-doped GaAs/AlGaAs heterostructure devices. The coupled differential equations governing the dynamical behaviors are numerically simulated. Biased with an appropriate dc field, the system exhibits two states: spontaneous current oscillation and fixed points. By imposing an ac driving force, the dynamical system shows frequency locking, quasiperiodicity, and chaos, which are sensitive to the amplitude and frequency of the externally applied periodical microwave field. The basins of attraction of both ordinary attractors and strange attractors are presented.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
$34.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or eBook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Hess, K., Morkoc, H., Shichijo, H. et al., Negative differential resistance through real-space electron transfer, Appl. Phys. Lett., 1979, 35: 469–471.

    Article  Google Scholar 

  2. Luryi, S., Pinto, M. R., Broken symmetry and the formation of hot electron domains in real-space transfer transistors, Phys. Rev. Lett., 1991, 67: 2351–2354.

    Article  Google Scholar 

  3. Aoki, K., Yamamoto, K., Mugibayashi, N. et al., Complex dynamic behavior and chaos in the Hess oscillator, Solid-state Electron., 1989, 32: 1149–1153.

    Article  Google Scholar 

  4. Dottling, R., Scholl, E., Domain formation in modulation-doped GaAs/Al x Ga1 −x As heterostructures, Solid-state Electron., 1994, 37: 685–688.

    Article  Google Scholar 

  5. Aoki, K., Kobayashi, T., Yamamoto, K., Chaotic motions in the electrical avalanche breakdown caused by weak photoexcitation in n-GaAs, J. Phys. Soc. Jpn., 1982, 51: 2373–2374.

    Article  Google Scholar 

  6. Aoki, K., Yamamoto, K., Nonlinear response and chaos in semiconductors induced by impact ionization, Appl. Phys. A, 1989, 48: 111–125.

    Article  Google Scholar 

  7. Zhang, Y. Z., Kastrup, J., Klann, R. et al., Synchronization and chaos induced by resonant tunneling in GaAs/AlAs superlattices, Phys. Rev. Lett., 1996, 77: 3001–3004.

    Article  Google Scholar 

  8. Niedemostheide, F.-J., Brillert, C., Kukuk, B. et al., Frequency-locked, quasiperiodic and chaotic motions of current-density filaments in a semiconductor device, Phys. Rev. B, 1996, 54: 14012–14019.

    Article  Google Scholar 

  9. Niedernostheide, F.-J., Kleinkes, M., Spatiotemporal dynamics of current-density filaments in a periodically driven multilayered semiconductor device, Phys. Rev. B, 1999, 59: 7663–7668.

    Article  Google Scholar 

  10. Scholl, E., Aoki, K., Novel mechanism of a real-space transfer oscillator, Appl. Phys. Lett., 1991, 58: 1277–1279.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Communication Engineering, Shanghai University, 200072, Shanghai, China

    Li Guohui & Xu Deming

  2. Department of Physics, Shanghai University, 201800, Shanghai, China

    Zhou Shiping

Authors
  1. Li Guohui
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Zhou Shiping
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Xu Deming
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Li Guohui.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Li, G., Zhou, S. & Xu, D. Complex dynamical behaviors in modulation-doped GaAs/Al x Ga1 −x As heterostructures. Sci China Ser F 44, 412–418 (2001). https://doi.org/10.1007/BF02713944

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02713944

Keywords