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Full-wave electromagnetic simulation of millimeter-wave active devices and circuits

Simulation électromagnétique toute-onde de dispositifs et circuits microondes

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Abstract

This paper discusses the most recent progress in developing effective physics-based models for devices operating at millimeter-wave frequencies. The model is based on coupling dynamic electromagnetic wave solutions with carrier transport models. The potentials of this modeling approach for both device simulation and the global simulation of millimeter-wave circuits are demonstrated. Results comparing the full-wave model developed with conventional electrostatic models are provided through the simulation of different microwave transistors. The ability of the model to detect traveling wave effects, such as phase mismatch between the input and output electrodes of a conventional transistor, and their effects on the device gain are also provided. Results from the simulation of an air-bridged gateMesfet, designed to reduce traveling wave effects in high frequency transistors and solve the problem associated with high gate resistance, are illustrated and discussed. Finally, results showing the ability of this technique to model the nonlinearity and the harmonic distortion are provided through the simulation of an amplifier circuit.

Résumé

Cet article discute des plus récents progrès dans les modèles physiques des dispositifs fonctionnant en ondes millimétriques. Le modèle utilise le couplage entre ondes électromagnétiques et les équations dynamiques des porteurs de charge. On montre les potentialités de ce modèle pour la simulation des circuits en ondes millimétriques. Une comparaison entre cette méthode et la méthode classique de l’électrostatique est réalisée par l’intermédiaire de la simulation de différents transistors microondes. L’aptitude du modèle à détecter des effets d’onde progressive, comme la désadaptation de phase entre l’entrée et la sortie d’un transistor ordinaire, et leurs effets sur le gain sont également fournis. Les résultats de la simulation d’une porteMesfet pontée, conçue pour réduire les effets de propagation et résoudre le problème associé à la forte résistance de porte, sont illustrés et commentés. Enfin, des résultats montrant la capacité du modèle à prendre en compte les non-linéarités ainsi que la distorsion harmonique sont fournis à trovers la simulation d’un circuit amplificateur.

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Authors and Affiliations

  1. Department of Electrical Engineering, Arizona State University, Tempe, AZ, 85287 - 7 206, USA

    Samir Hammadi, Robert O Grondin, Samir El-Ghazaly & Stephen Goodnick

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  1. Samir Hammadi
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  2. Robert O Grondin
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  3. Samir El-Ghazaly
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This work was supported by the Army Research Office under contract number

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Hammadi, S., Grondin, R.O., El-Ghazaly, S. et al. Full-wave electromagnetic simulation of millimeter-wave active devices and circuits. Ann. Télécommun. 54, 30–42 (1999). https://doi.org/10.1007/BF02998645

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