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40 Gbit/s transmission: III–V integrated circuits for opto-electronic interfaces

Transmission à 40 Gbit/s: Circuits Intégrés III–V Pour Les Interfaces Optoélectroniques

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Abstract

Increasing both wavelength count and bit rate per channel is presently implemented in order to improve the use of optical fiber bandwidth. This calls for suitable device structures and technologies for both optoelectronic transducers and associated driving electronics. For transmission at 40 Gbit/s per channel, Si and III–V microelectronic technologies are presently investigated with first successful demonstrations. In this paper the potential of GaAs and InP-based technologies to answer the 40 Gbit/s requirements and expected subsequent evolutions is addressed.

Résumé

Augmentations du nombre de longueurs d’onde et du débit par canal sont deux voies permettant d’utiliser au mieux la bande passante des fibres optiques. Cela demande des technologies et des composants adaptés, à la fois pour les composants optoélectroniques et pour leur électronique de commande. Dans le cas des transmissions à 40 Gbit/s par canal, les technologies microélectroniques Si et III–V sont actuellement étudiées, avec des premières démonstrations encourageantes. Dans cet article, on présente le potential des technologies GaAs et InP à satisfaire les besoins des circuits 40 Gbit/s et des évolutions futures.

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  1. Alcatel R&I, Opto+Route de Nozay, F-91461, Marcoussis

    André Scavennec, Jean Godin & René Lefevre

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Scavennec, A., Godin, J. & Lefevre, R. 40 Gbit/s transmission: III–V integrated circuits for opto-electronic interfaces. Ann. Télécommun. 58, 1485–1503 (2003). https://doi.org/10.1007/BF03001741

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