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High-Performance Mixed-Mode Universal Min-Max Circuits for Nanotechnology

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Abstract

In this paper a low-power, high-speed and high-resolution voltage-mode Min-Max circuit, as well as a new efficient universal structure for determining the minimum and maximum values of the input digital signals, is proposed for nanotechnology. In addition, the proposed designs provide rail-to-rail input and output signals which enhance the performance and the robustness of the circuits. The advantage of the proposed Min-Max circuit is that it is extendable for any arbitrary n-digit and radix-r input numbers. Comprehensive simulation results at CMOS and CNFET technologies demonstrate the low-power and high-performance operation as well as insusceptibility to PVT variations of the proposed structure.

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Authors and Affiliations

  1. Faculty of Electrical and Computer Engineering, Shahid Beheshti University, G.C., Tehran, Iran

    Mohammad Hossein Moaiyeri, Reza Chavoshisani, Ali Jalali, Keivan Navi & Omid Hashemipour

  2. Microelectronics Lab, Shahid Beheshti University, G.C., Tehran, Iran

    Mohammad Hossein Moaiyeri, Reza Chavoshisani, Ali Jalali & Omid Hashemipour

  3. Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, G.C., Tehran, Iran

    Mohammad Hossein Moaiyeri & Keivan Navi

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  1. Mohammad Hossein Moaiyeri
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  2. Reza Chavoshisani
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  3. Ali Jalali
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  4. Keivan Navi
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  5. Omid Hashemipour
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Correspondence to Keivan Navi.

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Moaiyeri, M.H., Chavoshisani, R., Jalali, A. et al. High-Performance Mixed-Mode Universal Min-Max Circuits for Nanotechnology. Circuits Syst Signal Process 31, 465–488 (2012). https://doi.org/10.1007/s00034-011-9344-3

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  • DOI: https://doi.org/10.1007/s00034-011-9344-3

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