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A Sub-\({100\,\hbox {ppm}/{^{\circ }\hbox {C}}}\) Temperature-Compensated High-Frequency CMOS Relaxation Oscillator

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Abstract

A temperature-compensated high-frequency CMOS integrated relaxation oscillator with low frequency variations is presented. A current-controlled oscillator topology is employed with a resistive source-degenerated transconductor and a current comparator to achieve high oscillation frequency and low power dissipation. The proposed oscillator was designed with process parameters from a standard 0.35-\(\upmu \)m CMOS technology and a 2.5-V single power supply voltage. At a nominal oscillation frequency of 21 MHz, the total power dissipation of the circuit was 201 \(\upmu \)W. Post-layout simulation results showed that the frequency variations were less than \({34.16\,\hbox {ppm}/{^{\circ }\hbox {C}}}\) over a temperature range of \(-40\) to \(+120\,^{\circ }\hbox {C}\).

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Authors and Affiliations

  1. Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung road, Ladkrabang, Bangkok, 10520, Thailand

    Siraporn Sakphrom & Apinunt Thanachayanont

  2. Institute of Biomedical Engineering, Imperial College London, Exhibition road, London, SW7 2BT, UK

    Pantelis Georgiou

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  1. Siraporn Sakphrom
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  2. Pantelis Georgiou
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  3. Apinunt Thanachayanont
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Correspondence to Apinunt Thanachayanont.

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Sakphrom, S., Georgiou, P. & Thanachayanont, A. A Sub-\({100\,\hbox {ppm}/{^{\circ }\hbox {C}}}\) Temperature-Compensated High-Frequency CMOS Relaxation Oscillator. Circuits Syst Signal Process 35, 29–42 (2016). https://doi.org/10.1007/s00034-015-0057-x

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