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0.3-V Bulk-Driven Nanopower OTA-C Integrator in 0.18 µm CMOS

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Abstract

This short paper presents the experimental results for a 0.3-V fully differential OTA-C integrator, implemented in a standard n-well 0.18 µm CMOS technology from TSMC with chip area 350 × 100 µm. The integrator consists of an adaptively biased bulk-driven linear operational transconductance amplifier (OTA) and a low-distortion common-mode feedback circuit. The integrator can operate with supply voltages ranging from 0.3 to 0.5 V. For a 0.3-V version, its cutoff frequency can be tuned from 50 to 334 Hz for a 220 pF load capacitance. For a nominal biasing current, its power consumption is 50 nW and the dynamic range is 75 dB.

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Acknowledgements

Research described in this paper was financed by the National Sustainability Program under Grant LO1401 and by the Czech Science Foundation under Grant No. P102-15-21942S. For the research, infrastructure of the SIX Center was used.

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Authors and Affiliations

  1. Department of Microelectronics, Brno University of Technology, Technicka 10, Brno, Czech Republic

    Fabian Khateb & Pavel Steffan

  2. Faculty of Biomedical Engineering, Czech Technical University in Prague, nám. Sítná 3105, Kladno, Czech Republic

    Fabian Khateb

  3. Department of Electrical Engineering, Technical University of Częstochowa, 42-201, Częstochowa, Poland

    Tomasz Kulej

  4. Microelectronic Research Laboratory, Shahid Beheshti University, G.C., Tehran, Iran

    Meysam Akbari

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  1. Fabian Khateb
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  2. Tomasz Kulej
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  4. Pavel Steffan
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Correspondence to Fabian Khateb.

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Khateb, F., Kulej, T., Akbari, M. et al. 0.3-V Bulk-Driven Nanopower OTA-C Integrator in 0.18 µm CMOS. Circuits Syst Signal Process 38, 1333–1341 (2019). https://doi.org/10.1007/s00034-018-0901-x

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  • DOI: https://doi.org/10.1007/s00034-018-0901-x

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