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A New Method for Design of CNFET-Based Quaternary Circuits

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Abstract

In this paper, a new method for designing quaternary circuits in carbon nanotube field-effect transistor (CNFET) technology is proposed. Beyond many advantages of multi-valued logics (MVLs), the conversion of bits of a byte between quaternary and binary logic is easy and can be done independently. Therefore, this logic can be used effectively for wholly quaternary circuit design or beside binary logic as part of a great digital system. Thanks to particular capabilities of CNFET technology, proposed designs are implemented in this technology. These complementary symmetric gates are merely made by transistors and require only one supply voltage in addition to ground level. The proposed design for implementing standard quaternary inverter (SQI) generates three inherently binary inverters in quaternary logic as well: positive quaternary inverter (PQI), negative quaternary inverter (NQI) and symmetric quaternary inverter (SyQI). Based on the proposed design, new quaternary NAND (QNAND) and quaternary NOR (QNOR) gates are presented as well. These gates could be used as fundamental blocks for implementing complex digital circuits. QNAND and QNOR may be designed to adopt up to four inputs; however, in general applications, designs with two inputs are used. Proposed gates are simulated by means of Synopsys HSPICE tool with the standard 32 nm CNFET Stanford model, and performance parameters including maximum delay time, average power and energy consumption are extracted and compared with the simulation results of the state-of-the-art designs. The results indicate priority of proposed designs such that the delay time and energy consumption are roughly equal or less than half and one-third of other presented designs, respectively. Moreover, the voltage transfer curve (VTC) of proposed gates demonstrates the proper noise margin values from 90 mV up to 113 mV for different gates. For evaluating stability and robustness of these gates, more simulations are carried out by considering process deviations in which the proposed designs demonstrate proper performance among all in the most simulations.

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References

  1. E. Abiri, A. Darabi, A novel design of low power and high read stability Ternary SRAM (T-SRAM), memory based on the modified Gate diffusion input (m-GDI) method in nanotechnology. Microelectron. J. 58, 44–59 (2016)

    Article  Google Scholar 

  2. A. Bozorgmehr, M.H. Moayeri, K. Navi, N. Bagherzadeh, Ultra-efficient fuzzy min/max circuits based on carbon nanotube FETs. IEEE Trans. Fuzzy Syst. 26, 1073–1078 (2017)

    Article  Google Scholar 

  3. D. Brito, T.G. Rabuske, J.R. Fernandes, P. Flores, J. Monteiro, Quaternary logic lookup table in standard CMOS. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 23(2), 306–316 (2015)

    Article  Google Scholar 

  4. J. Deng, H.-S. Wong, A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—part I: model of the intrinsic channel region. IEEE Trans. Electron Devices 54, 3186–3194 (2007)

    Article  Google Scholar 

  5. J. Deng, H.-S. Wong, A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—part II: full device model and circuit performance benchmarking. IEEE Trans. Electron Devices 54, 3195–3205 (2007)

    Article  Google Scholar 

  6. A. Doostaregan, M.H. Moaiyeri, K. Navi, O. Hashemipour, On the design of new low-power CMOS standard ternary logic gates, in Proceedings of the 15th CSI International Symposium on Computer Architecture and Digital Systems (2010), pp. 115–120

  7. T. Eudes, B. Ravelo, A. Louis, Experimental validations of a simple PCB interconnect model for high-rate signal integrity. IEEE Trans. EMC 54(2), 397–404 (2012)

    Google Scholar 

  8. T. Eudes, B. Ravelo, Analysis of multi-gigabits signal integrity through clock H-tree. Int. J. Circuit Theory Appl. 41(5), 535–549 (2013)

    Article  Google Scholar 

  9. A. Gabrielli, E. Gandolfi, A fast digital fuzzy processor. IEEE Micro 19(1), 61–79 (1999)

    Article  Google Scholar 

  10. V. Gaudet, A survey and tutorial on contemporary aspects of multiple-valued logic and its application to microelectronic circuits. IEEE J. Emerg. Sel. Top. Circuits Syst. 6(1), 5–122 (2016)

    Article  Google Scholar 

  11. S.L. Hurst, Multiple-valued logic-its status and its future. IEEE Trans. Comput. 33(12), 1160–1179 (1984)

    Article  Google Scholar 

  12. E.A. Laird, F. Kuemmeth, G.A. Steele, K. Grove-Rasmussen, J. Nygard, K. Flensberg, L.P. Kouwenhoven, Quantum transport in carbon nanotubes. Rev. Mod. Phys. 87(3), 703 (2015)

    Article  MathSciNet  Google Scholar 

  13. J. Liang, L. Chen, J. Han, F. Lombardi, Design and evaluation of multiple valued logic gates using pseudo N-type carbon nanotube FETs. IEEE Trans. Nanotechnol. 13(4), 695–708 (2014)

    Article  Google Scholar 

  14. S. Lin, Y.-B. Kim, F. Lombardi, A Novel ternary logic design based on CNFET, in Proceedings of IEEE International Midwest Symposium on Circuits and Systems, Cancun, Mexico (2009)

  15. S. Lin, Y.-B. Kim, F. Lombardi, Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage and high stability. Integr. VLSI J. 43(2), 176–187 (2010)

    Article  Google Scholar 

  16. X. Lu, Z. Chen, Curved pi-conjugation, aromaticity, and the related chemistry of small fullerenes. Chem. Rev. 105(10), 3643–3696 (2005)

    Article  Google Scholar 

  17. J.K. Meena, S.C. Jain, H. Gupta, S. Gupta, Synthesis of balanced quaternary reversible logic circuit, in Circuit, Power and Computing Technologies (ICCPCT), International Conference on (IEEE, 2015)

  18. M.H. Moaiyeri, R.F. Mirzaee, A. Doostaregan, K. Navi, O. Hashemipour, A universal method for designing low-power carbon nanotube FET-based multiple-valued logic circuits. IET Comput. Digit. Tech. 7(4), 167–181 (2013)

    Article  Google Scholar 

  19. M.H. Moaiyeri, K. Navi, N. Bagherzadeh, Ultra-low-power carbon nanotube FET-based quaternary logic gates. Int. J. Electron. 103(9), 1524–1537 (2016)

    Google Scholar 

  20. A. Morgenshtein, A. Fish, I.A. Wagner, Gate-diffusion input (GDI): a power efficient method for digital combinatorial circuits. IEEE Trans. VLSI Syst. 10(5), 566–581 (2002)

    Article  Google Scholar 

  21. K. Navi, A. Doostaregan, M.H. Moaiyeri, O. Hashemipour, A hardware-friendly arithmetic method and efficient implementations for designing digital fuzzy adders. Fuzzy Sets Syst. 185(1), 111–124 (2011)

    Article  MathSciNet  MATH  Google Scholar 

  22. A. Nekooei, Z. Navabi, Multi-valued logic test access mechanism for test time and power reduction, in Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 10th International Conference on (IEEE, 2015)

  23. B. Ravelo, Delay modelling of high-speed distributed interconnect for the signal integrity prediction. Eur. Phys. J. Appl. Phys. (EPJAP) 57(31002), 1–8 (2012)

    Google Scholar 

  24. A. Raychowdhury, K. Roy, Carbon-nanotube-based voltage-mode multiple-valued logic design. IEEE Trans. Nanotechnol. 4, 168–179 (2005)

    Article  Google Scholar 

  25. A. Raychowdhury, K. Roy, Carbon nanotube electronics: design of high-performance and low-power digital circuits. IEEE Trans. Circuits Syst. 54, 2391–2401 (2007)

    Article  Google Scholar 

  26. Z. Tang, Q. Cao, O. Ishizuka, A learning multiple-valued logic network: algebra, algorithm and applications. IEEE Trans. Comput. 47(2), 247–250 (1998)

    Article  Google Scholar 

  27. Y. Yang, L. Ding, J. Han, Z. Zhang, L.M. Peng, High-performance complementary transistors and medium-scale integrated circuits based on carbon nanotube thin films. ACS Nano 11(4), 4124–4132 (2017)

    Article  Google Scholar 

  28. Z. Yu, Y. Chen, H. Nan, W. Wang, K. Choi, Design of a novel low power 6-T CNFET SRAM cell working in sub-threshold region, in Proceedings of IEEE International Conference on Electro/Information Technology (EIT) (2011), pp. 1–5

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Correspondence to Akbar Doostaregan.

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Doostaregan, A., Abrishamifar, A. A New Method for Design of CNFET-Based Quaternary Circuits. Circuits Syst Signal Process 38, 2588–2606 (2019). https://doi.org/10.1007/s00034-018-0981-7

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