Abstract
In this paper, a reconfigurable multi-mode Class-AB/F power amplifier (PA) is proposed for 0.1–4.2 GHz multistandard applications. The PA operates in linear mode (class-AB) for variable-envelope modulated signals and switching mode (class-F) for constant-envelope modulated signals. The proposed linear mode PA design is suitable for multi-band LTE, IOT, WSN and multi-standard RF transmitter, while switching mode PA design can be used in multi-band IOT-LPWA and BLE (Bluetooth Low Energy) RF transmitter. The proposed PA has a reconfigurable off-chip inter-stage and output matching networks over the specified frequency band, while the input stage is Complementary Current-Reuse common-gate with active shunt feedback configuration to achieve Ultra-Wideband (UWB) input matching. The proposed multi-mode PA is designed using a 130 nm CMOS process. Class-AB PA has a saturated output power of 23.5 dBm ± 1 dB over 0.1–4.2 GHz, a power-added efficiency (PAE) of 41%, a third-order intercept point (OIP3) of 17 dBm, and adjacent channel power ratio (ACPR) of − 29.3 dBc for LTE 15 MHz channel bandwidth. The maximum PAE of 62.1% under the class-F operation is achieved at output power of 24.5 dBm. The PA occupies 0.64 mm2 of chip area, while the estimated off-chip area is 13.3 mm2. The proposed PA consumes 164 mW, and 16 mW in class-AB and class-F, respectively.










Similar content being viewed by others
References
W. Ahmad, M. Xu, L. Törmänen, H. Sjöland, A fully integrated 26 dBm linearized RF power amplifier in 65nm CMOS technology. IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, pp. 1306–1309.(2015)
P. Colantonio, F. Giannini, G. Leuzzi, E. Limiti, On the class-F power amplifier design. Int. J. RF Microw. Comput. Aided Eng. 9(2), 129–149 (1999)
S.C. Cripps, Advanced Techniques in RF Power Amplifier Design (Artech House, Norwood, MA, 2002)
E. Arafa, A. Zekry, H. Shawkey, M. Ali, A CMOS RF Transmitter for LTE Applications: Implementation and Simulation. Novel Intelligent and Leading Emerging Sciences Conference (NILES), Giza, Egypt, 2019, pp. 55–58.(2019)
S. Gao, High-efficiency class-F RF/microwave power amplifiers. IEEE Micro 7(1), 40–48 (2006)
Harriott, E.W., High efficiency microwave power amplifier design. Retrospective Theses and Dissertations. 7425 (1981)
G. Jeong, T. Joo, S. Hong, A highly linear and efficient CMOS power amplifier with cascode–cascade configuration. IEEE Microw. Wireless Compon. Lett. 27(6), 596–598 (2017)
K. Kim, J. Ko, S. Lee, S. Nam, A two-stage broadband fully integrated CMOS linear power amplifier for LTE applications. IEEE Trans. Circuits Syst. II Exp. Briefs 63(6), 533–537 (2016)
J.H. Kim, C.S. Park, A feedback technique to compensate for AMPM distortion in linear CMOS class-F power amplifier. IEEE Microw. Wirel. Compon. Lett. 24(10), 725–727 (2014)
J. Ko, S. Nam, A two-stage S-/X-band CMOS power amplifier for high-resolution radar transceivers. IEEE Microw. Wirel. Compon. Lett. 28(7), 606–608 (2018)
B. Ku, S. Baek, S. Hong, A wideband transformer-coupled CMOS power amplifier for X-band multifunction chips. IEEE Trans. Microw. Theory Tech. 59(6), 1599–1609 (2011)
Y. Liu, B. Ravelo, Fully time-domain scanning of EM near-field radiated by RF circuits. Prog. Electromagn. Res. (PIER) B 57, 21–46 (2014)
M. Mansour, A. Zekry, R.S. Ghoname, Building radio frequency transmitter for LTE user equipment. J. Commun. Appl. Electron. (CAE) 2(4), 1–9 (2015)
E. McCune, High-efficiency, multi-mode, multi-band terminal power amplifiers. IEEE Microw. Mag. 6(1), 44–55 (2005)
S. Park, J. Woo, U. Kim, Y. Kwon, Broadband CMOS stacked RF power amplifier using reconfigurable interstage network for wideband envelope tracking. IEEE Trans. Microw. Theory Tech. 63(4), 1174–1185 (2015)
F.H. Raab, Class-F power amplifiers with maximally flat waveforms. IEEE Trans. Microw. Theory Tech. 45(11), 2007–2012 (1997)
B. Ravelo, Synthesis of N-way active topology for wide-band RF/microwave applications. Int. J. Electron. (IJE) 99(5), 597–608 (2012)
B. Razavi, RF Microelectronics (Prentice Hall, Upper Saddle River, NJ, 2012)
N. Ryu, B. Park, Y. Jeong, A fully integrated high efficiency RF power amplifier for WLAN application in 40 nm standard CMOS process. IEEE Microw. Wirel. Compon. Lett. 25(6), 382–384 (2015)
T.H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, 2nd edition, (2012)
H. Wang, L. Zhang, Z. Yu, A wideband inductorless LNA with local feedback and noise cancelling for low-power low-voltage applications. IEEE Trans. Circuits Syst. I Reg. Papers 57(8), 1993–2005 (2010)
Y.Y. Woo, Y. Yang, B. Kim, Analysis and experiments for high efficiency class-F and inverse class-F power amplifiers. IEEE Trans. Microw. Theory Tech. 54(5), 1969–1974 (2006)
Y. Yin, B. Chi, Z. Xia, Z. Wang, A reconfigurable dual-mode CMOS power amplifier with integrated T/R switch for 0.1–1.5 GHz multistandard applications. IEEE Trans. Circuits Syst. II Exp. Briefs 61(7), 471–475 (2014)
Acknowledgements
The author wants to extend her deepest gratitude to acknowledge the valuable comments of Editor-in-Chief and reviewers.
Funding
The author received no specific funding for this work.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
The author declares that she has no conflict of interest.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Mansour, M., Zekry, A., Ali, M.K. et al. A Reconfigurable Class-AB/F Power Amplifier for 0.1–4.2 GHz Multistandard Applications. Circuits Syst Signal Process 40, 1111–1126 (2021). https://doi.org/10.1007/s00034-020-01525-4
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00034-020-01525-4