Skip to main content
Log in

An Area-Effective High-Resolution All-Digital CMOS Time-Domain Smart Temperature Sensor

  • Published:
Circuits, Systems, and Signal Processing Aims and scope Submit manuscript

Abstract

This study introduces an all-digital CMOS time-domain smart temperature sensor (STS) that offers a smaller circuit area and reduced complexity. In contrast to previous studies that utilized multiple delay lines or additional path selection circuits, the proposed new structure employs a single cyclic path and fewer delay lines. The functionality of high-resolution temperature sensing, pulse-shrinking time measurement, and built-in offset-error cancellation is achieved using only one cyclic delay line (CDL). The temperature-sensing delay line generates a thermal-dependent pulse width proportional to the absolute temperature (PTAT). Subsequently, a pulse-shrinking unit, implemented within the pulse-shrinking delay line, performs time-to-digital conversion by measuring the PTAT pulse width. Finally, a time-added delay line within the CDL incorporates a simple D-type Flip Flop to enable concise offset-error cancellation, thereby improving accuracy. This study further simplifies the cancellation circuitry to reduce the overall circuit area. The proposed sensor, fabricated using a TSMC \(0.35\mu m\) CMOS process, occupies an area of \(0.022 \text {mm}^2\), providing a cost-effective solution for pulse-shrinking STSs. The maximum inaccuracy after offset-error cancellation is \(1.3 ^\circ \)C within a temperature range of \(0 \sim 80 ^\circ \)C, with a high resolution of approximately \(0.035 ^\circ \)C/LSB. This resolution enhancement significantly surpasses similar studies. By reducing circuit complexity, the proposed sensor successfully achieves improvements in both area and resolution.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12
Fig. 13

Similar content being viewed by others

Data Availability

Not applicable. Since the proposed in this paper is a smart sensor, all the input–output data are obtained by the chip measurement procedure as stated in the context.

References

  1. Y.-J. An, K. Ryu, D.-H. Jung, S.-H. Woo, S.-O. Jung, An energy efficient time-domain temperature sensor for low-power on-chip thermal management. IEEE Sens. J. 14(1), 104–110 (2014)

    Article  Google Scholar 

  2. C.-C. Chen, C.-S. Hwang, C.-S. Chu, Area-efficient CMOS pulse-shrinking smart temperature sensor with improved accuracy and resolution. Rev. Sci. Instrum. 89(12), 125002(1–8) (2018). https://doi.org/10.1063/1.5057426

    Article  Google Scholar 

  3. C.-C. Chen, C.-H. Chu, All-digital pulse-expansion-based CMOS digital-to-time converter. Rev. Sci. Instrum. 88(2), 024704(1–9) (2017)

    Article  Google Scholar 

  4. C.-C. Chen, Hao-Wen. Chen, A low-cost CMOS smart temperature sensor using a thermal-sensing and pulse-shrinking delay Line. IEEE Sens. J. 14(1), 278–284 (2014)

    Article  Google Scholar 

  5. P. Chen, C.-C. Chen, C.-C. Tsai, W.-F. Lu, A Time-to-Digital-Converter-Based CMOS Smart Temperature Sensor. IEEE J. Solid-State Circuits 40(8), 1642–8 (2205)

    Google Scholar 

  6. P. Chen, C.-C. Chen, Y.-H. Peng, K.-M. Wang, Y.-S. Wang, A Time-Domain SAR Smart Temperature Sensor with Curvature Compensation and a \(3\sigma \) Inaccuracy of \(0.4^\circ C\sim +0.6^\circ C\) over a \(0^\circ C\) to \(90^\circ C\) Range. IEEE J. Solid-State Circuits 45(3), 600–609 (2010)

    Article  Google Scholar 

  7. T.A. Demassa, Z. Ciccone, Digital integrated circuits (Wiley, 1996)

    Google Scholar 

  8. Q. Huang, Hyobin Joo, Jinwoo Kim, C. Zhan, J. Burm, An energy-efficient frequency-domain CMOS temperature sensor with switched vernier time-to-digital conversion. IEEE Sens. J. 17(10), 3001–3011 (2017)

    Article  Google Scholar 

  9. R.S.S.M.R. Krishna, A.K. Mal, R. Mahapatra, Time-domain smart temperature sensor using current starved inverters and switched ring oscillator-based time-to-digital converter. Circuits Syst Signal Process. 39(8), 1751–1769 (2019)

    Google Scholar 

  10. K. Kim, H. Lee, C. Kim, \(366Ks/s\)\(1.09nJ\)\(0.0013mm^2\) frequency-to-digital converter based CMOS temperature sensor utilizing multiphase clock. IEEE Trans. Very Large Scale Integr. (VLSI) Syst 20(12), 1–5 (2012)

    MathSciNet  Google Scholar 

  11. M.-K. Law, A. Bermak, H.-C. Luong, A Sub-\(\mu W\) Embedded CMOS Temperature Sensor for RFID Food Monitoring Application. IEEE J. Solid-State Circuits 45(6), 1246–1255 (2010)

    Article  Google Scholar 

  12. K.A.A. Makinwa, Temperature sensor performance survey, Available: http://ei.ewi.tudelft.nl/docs/TSensor_survey.xls

  13. S. Park, S. Byun, A \(0.026 mm^2\) time domain CMOS temperature sensor with simple current source. Micromachines 11(10), 1–10 (2020)

    Article  Google Scholar 

  14. M.A.P. Pertijs, K.A.A. Makinwa, J.H. Huijsing, A CMOS smart temperature sensor with a \(3\sigma \) inaccuracy of \(\pm 0.16^\circ C\) from \(-55^\circ C\) to \(125^\circ C\). IEEE J. Solid-State Circuits 40(12), 2805–2815 (2005)

    Article  Google Scholar 

  15. W. Song, J. Lee, N. Cho, J. Burm, An ultralow power time-domain temperature sensor with time-domain delta-sigma TDC. IEEE Trans. Circuits Syst. II, Exp. Briefs 64(10), 1117–1121 (2017)

    Google Scholar 

  16. K. Souri, Y. Chae, K.A.A. Makinwa, A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of \(0.15^\circ C\) (\(3\sigma \)) From \(55^\circ C\) to \(125^\circ C\). IEEE J. Solid-State Circuits 48(1), 292–301 (2013)

    Article  Google Scholar 

  17. Z. Tang, N.N. Tan, Z. Shi, X.-P. Yu, A 1.2v self-referenced temperature sensor with a time-domain readout and a two-step improvement on output dynamic range. IEEE Sens. J. 18(5), 1849–1858 (2018)

    Article  Google Scholar 

  18. B. Wang, et al., A BJT-based CMOS temperature sensor achieving an inaccuracy of \(\pm 0.45^\circ C (3\sigma )\) from \(-50^\circ C\) to \(180^\circ C\) and a resolution-FoM of \(7.2 pJ K2\) at \(150^\circ C\). IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, (2022) Section 3.8

  19. X. Wang, P.-H. Wang, Y. Cao, P. Mercier, A 0.6V \(75nW\) all-CMOS temperature sensor with \(1.67m^\circ C/mV\) supply sensitivity. IEEE Trans. Circuits Syst. I 64(9), 2274–2283 (2017)

    Article  Google Scholar 

  20. B. Yousefzadeh et al., A BJT-based temperature-to-digital converter With a \(\pm 0.25^\circ C 3\sigma \) inaccuracy From \(-40^\circ C\) to \(+180^\circ C\) using heater-assisted voltage calibration. IEEE J. Solid-State Circuits 55(2), 369–377 (2020)

    Article  Google Scholar 

Download references

Acknowledgements

This work was financially supported by National Science and Technology Council (NSTC) of Taiwan for Grants MOST 110-2221-E-992-094, MOST 110-2221-E-992-003, and NSTC 112-2221-E-992-071-. The authors would like to express their appreciation to Taiwan Semiconductor Research Institute (TSRI) for supporting EDA tools and chip fabrication.

Funding

No funding was received for this research.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Chao-Lieh Chen.

Ethics declarations

Conflict of interest

The authors have no conflicts of interest to declare. All co-authors have seen and agree with the contents of the manuscript, and there is no financial interest to report. We certify that the submission is original work and is not under review at any other publication.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Chen, CC., Chen, CL., Chu, YC. et al. An Area-Effective High-Resolution All-Digital CMOS Time-Domain Smart Temperature Sensor. Circuits Syst Signal Process 43, 1144–1156 (2024). https://doi.org/10.1007/s00034-023-02507-y

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00034-023-02507-y

Keywords

Navigation