Abstract
The 28 nm CMOS process is the major commercial successor of the 65 nm one and widely used for the design of advanced application-specific integrated circuits (ASICs) in the field of instrumentation for radiation detectors in high-energy physics (HEP) experiments. The HEP community is now migrating to the 28 nm process for the design of readout electronics for pixel detectors and other mixed-signal circuits. In this work a comparison of the main device parameters, including noise, intrinsic gain and mismatch, will be presented for the two technologies. The design in 28 nm CMOS of basic analog building blocks for the development of pixel frontend channels will also be discussed. In particular, this work will be focused on the design of compact gain stages for the design of charge-sensitive amplifiers and on the development of fast- and low-power asynchronous comparators.
Zusammenfassung
Der 28 nm CMOS-Prozess ist der wichtigste kommerzielle Nachfolger des 65 nm-Prozesses. Dieser wird häufig für den Entwurf fortschrittlicher ASICs im Bereich der Instrumentierung für Strahlungsdetektoren in Experimenten der Hochenergiephysik (HEP) verwendet. Die HEP-Community migriert jetzt für das Design von Ausleseelektronik für Pixeldetektoren und andere Mixed-Signal-Schaltungen zum 28 nm-Prozess. In dieser Arbeit wird ein Vergleich der wichtigsten Geräteparameter, einschließlich Geräusche, intrinsischer Verstärkung und Abweichung, für die beiden Technologien vorgestellt. Außerdem wird das Design des 28 nm CMOS analoger Grundbausteine für die Entwicklung von Pixel-Frontend-Kanälen besprochen. Der Schwerpunkt dieser Arbeit liegt insbesondere auf der Gestaltung von kompakten Verstärkungsstufen für das Design ladungsempfindlicher Verstärker und darüber hinaus auf der Entwicklung schneller und stromsparender asynchroner Komparatoren.
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The authors wish to acknowledge all the colleagues of the University of Bergamo and Pavia who helped to improve the quality of this paper with their useful suggestions.
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This work was funded by the Italian Institute of Nuclear Physics.
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Traversi, G., Gaioni, L. & Galliani, A. From 65 nm to 28 nm CMOS: design of analog building blocks of frontend channels for pixel sensors in high-energy physics experiments. Elektrotech. Inftech. 141, 11–19 (2024). https://doi.org/10.1007/s00502-023-01198-2
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DOI: https://doi.org/10.1007/s00502-023-01198-2