Abstract
Face sketch synthesis from an input photo is a challenging task for law enforcement applications. Prior methods generally have required neighbor selection process for candidate sketch patches on a large-scale of training data, which is tedious and time consuming. This paper proposes a new face sketch synthesis method by means of Bidirectional Long Short Term Memory (BiLSTM) recurrent neural network, that is commonly utilized for sequence regression. BiLSTM neural networks can learn spatial and texture patterns within a single regression model, which does not only significantly speeds up the synthesis process but also improves the synthesis performance. The main thought behind the proposed method is to transfer the input photo into sequential patterns on the basis of regular overlapping patches. Then, the synthesized sketch patch corresponding to each input photo patch is predicted through BiLSTM Regression Model (BiLSTM-RM) learned from training photo-sketch pairs. Experimental results on public face sketch databases demonstrated that the proposed BiLSTM-RM method outperforms state-of-the-art methods, and also it can be generalized well to face sketch synthesis for real-world applications that work on photos with pose variance.











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The source code and obtained results will be available online based on publication.
All synthesized sketches are obtained from the authors themselves or their websites.
Pose variation photos were downloaded from https://pan.baidu.com/s/1i4CYLpF.
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Acknowledgements
The authors highly acknowledge the Universiti Sains Malaysia for its fund Universiti Sains Malaysia Research University (RUI) Grant no.1001.PELECT.8014056. The authors also gratefully acknowledge the support of Associate Professor Dr. Nannan Wang from Xidian University, Xi’an, China, by providing the results of his recent publications for face sketch synthesis.
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Radman, A., Suandi, S.A. BiLSTM regression model for face sketch synthesis using sequential patterns. Neural Comput & Applic 33, 12689–12702 (2021). https://doi.org/10.1007/s00521-021-05916-9
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DOI: https://doi.org/10.1007/s00521-021-05916-9