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Reverse Breakdown Voltage Measurement for Power P+NN+ Rectifier

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Abstract

The measurement of the reverse breakdown voltage for power rectifier is an important test. Two test methods for the reverse breakdown voltage measurement are employed in the industry, namely the forced voltage test (FVT) and the forced current test (FCT). In this work, we perform a systematic study to explain the different breakdown voltages obtained from the two test methods and the possible damage mechanisms to the device under test during FVT and FCT. The study shows that FVT has a much shorter test time while FCT is less destructive to the device under test.

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References

  1. Amerasekera A, Chang M-C, Seitchik JA, Chatterjee A, Mayaram K, Chern J-H (1993) Self-heating effects in basic semiconductor structures. IEEE Trans Electron Devices 40(10):1836–1844

    Article  Google Scholar 

  2. Avant! Chapter 2: Medici users manual, release 2001.4

  3. Blichert A (1982) Physics of semiconductor power devices. Rep Prog Phys 45:427–468

    Article  Google Scholar 

  4. Box GEP, Draper NR (1987) Chapter 1: Empirical model-building and response surfaces. Wiley, New York

    Google Scholar 

  5. Ghandhi SK (1997) Chapter 1: Semiconductor power devices: physics of operation and fabrication. Wiley, New York

    Google Scholar 

  6. Hull BA, Das MK, Richmond JT, Sumakeris JJ, Leonard R, Palmour JW, Leslie S (2006) A 180 Amp/4.5 kV 4H-SiC PiN diode for high current power modules. IEEE ISPED

  7. IEC747-2 (1983) Semiconductor devices. Discrete devices and integrated circuits. Part 2, Rectifier diodes

  8. Roulston DJ (1990) Bipolar semiconductor devices, McGraw-Hill, Chapter 4

  9. Sze SM (1997) Chapter 2: Modern semiconductor device physics. Wiley, New York

    Google Scholar 

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Acknowledgment

The authors would like to thank Poworld Electronic Pte Ltd. in providing information on power diodes testing for this work.

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Correspondence to Cher Ming Tan.

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Responsible Editor: M. Margala

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Huang, G., Tan, C.M. Reverse Breakdown Voltage Measurement for Power P+NN+ Rectifier. J Electron Test 24, 473–479 (2008). https://doi.org/10.1007/s10836-007-5054-y

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  • DOI: https://doi.org/10.1007/s10836-007-5054-y

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