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Investigation of Single Event Effects in a Resistive RAM Memory Array by Coupling TCAD and SPICE Simulations

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Abstract

Resistive Random Access Memory (RRAM) are attractive candidates to overcome power, cost and integration density limitations of conventional memories. They are emerging non-volatile memories, based on resistive switching mechanisms. Due to their intrinsic structure, RRAMs technology is known to exhibit very good tolerance to radiation. In this context, this paper proposes to investigate Single Event Effects in RRAM arrays, for particles with different characteristics: a 0.6 MeV Alpha and a 1.47 MeV Aluminum. The decoding circuitry of the memory array, including bit line and source line drivers is targeted. Currents shapes generated by Alpha and Aluminum particles are obtained from TCAD simulations to propose realistic SPICE simulations. Worst cases scenarios are studied in order to point out the most sensitive configurations able to induce Single Event Effects (SEE).

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Only supporting data related to electrode outputs could be available from the corresponding author, upon reasonable request.

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Authors and Affiliations

  1. IM2NP-UMR CNRS 7334, Aix-Marseille University, IM2NP, IMT Technopôle de Château – Gombert, Marseille Cedex 20, 13451, France

    K. Coulié, H. Aziza & W. Rahajandraibe

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  1. K. Coulié
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  2. H. Aziza
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  3. W. Rahajandraibe
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Coulié, K., Aziza, H. & Rahajandraibe, W. Investigation of Single Event Effects in a Resistive RAM Memory Array by Coupling TCAD and SPICE Simulations. J Electron Test 39, 275–288 (2023). https://doi.org/10.1007/s10836-023-06068-5

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