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Quantum Computer Development with Single Ion Implantation

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Abstract

Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon. Formation of devices with a few qubits is crucial for validation of basic ideas and development of a scalable architecture. We describe our development of a single ion implantation technique for placement of single atoms into device structures. Collimated highly charged ion beams are aligned with a scanning probe microscope. Enhanced secondary electron emission due tohigh ion charge states (e.g., 31P13+, or 126Te33+)allows efficient detection of single ion impacts. Studies of electrical activation of low dose, low energy implants of 31P in silicon show a drastic effect of dopant segregation to the SiO2/Si interface,while Si3N4/Si retards 31P segregation. We discuss resolution limiting factors in ion placement, and process challenges forintegration of single atom arrays with control gates and single electron transistors.

PACS: 03.67.Lx, 34.50.Dy, 85.35.Gv, 73.23, 61.72, 86.40.py, 07.79.-v

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Authors and Affiliations

  1. E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    A. Persaud, S. J. Park, J. A. Liddle, J. Bokor, R. Keller, F. I. Allen & T. Schenkel

  2. Institute of Microstructure Technologies and Analytics, University of Kassel, 34109, Kassel, Germany

    I. W. Rangelow

  3. Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, 94720, USA

    J. Bokor

  4. Lawrence Livermore National Laboratory, Livermore, CA, 94550, USA

    D. H. Schneider

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  1. A. Persaud
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Persaud, A., Park, S.J., Liddle, J.A. et al. Quantum Computer Development with Single Ion Implantation. Quantum Information Processing 3, 233–245 (2004). https://doi.org/10.1007/s11128-004-3879-1

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  • DOI: https://doi.org/10.1007/s11128-004-3879-1

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