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A multitasking device based on electromagnetically induced transparency in optical cavities

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Abstract

Quantum memories and optical transistors are elementary building blocks for the implementation of many devices for quantum computers and quantum communication. The realization of experiments that can perform both capabilities in the same setup can open an avenue of possibilities in the development of such practical quantum technologies. We theoretically investigate the feasibility of implementing a quantum memory and an optical transistor in the same setup using a combination of electromagnetically induced transparency and cavity quantum electrodynamics (cavity-EIT) for single- and two-sided cavity configurations. This was accomplished by considering a single three-level atom in \(\Lambda \) configuration coupled to a single electromagnetic mode of the cavity and a suitable temporal shape for the EIT control field. An optical transistor in cavity-EIT can be realized in a symmetric cavity with two output channels while a high efficient quantum memory must be performed in a single-sided one. From the master equation and input–output formalisms for the intracavity and outside fields, respectively, we obtain the upper bound of \(50\%\) for the memory efficiency with perfect transistor action in two-sided cavities and values close to \(100\%\) for the efficiency with a limited transistor effect for the single-sided setup in the high cooperativity regime. Thus, we showed that a dual device, which operates as a quantum memory and an optical transistor in the same setup of cavity-EIT, can be accomplished with some limitation in one of those capabilities.

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Notes

  1. The full scattering of light by the atom observed for \(g = 0.8\kappa \) can be obtained from the stationary solutions given by Eqs. (9) and (10), by considering \(\gamma = \kappa _A\). Once in the one-sided cavity configuration we have \(\kappa _A = \kappa \), we found \(a_\mathrm{out} = 0\). It means that the outside field is zero and \(\sigma ^s = a_\mathrm{in}\). Due to the presence of the atom inside the cavity, we can derive an effective field decay rate given by \(\gamma = g^2/\Gamma _{31}\) [47, 48]. In our simulations, we assume \(\Gamma _{31} = 0.6\kappa \), which provides \(g\sim 0.8\kappa \), showing that the result obtained from the stationary solution is in complete agreement with the numerical result presented in Fig. 4c.

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Acknowledgements

The authors gratefully acknowledge support by the Brazilian founding agencies São Paulo Research Foundation (FAPESP) Grants #2012/00176-9, #2013/04162-5, #2014/12740-1 and #2015/21229-1, National Council of Scientific and Technological Development (CNPq) Grant #308860/2015-2 and the Brazilian National Institute of Science and Technology for Quantum Information (INCT-IQ) Grant No. 465469/2014-0. We also thank the fruitful discussions with Stephan Ritter.

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Authors and Affiliations

  1. Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP, 13565-905, Brazil

    R. R. Oliveira, H. S. Borges & C. J. Villas-Boas

  2. Departamento de Física, Química e Matemática, Universidade Federal de São Carlos, Sorocaba, SP, 18052-780, Brazil

    J. A. Souza

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  1. R. R. Oliveira
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Oliveira, R.R., Borges, H.S., Souza, J.A. et al. A multitasking device based on electromagnetically induced transparency in optical cavities. Quantum Inf Process 17, 311 (2018). https://doi.org/10.1007/s11128-018-2069-5

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