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Optimized Threshold Voltage Variation for Tunable Body Biasing CMOS Power Amplifier

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Abstract

In this work, variation in threshold voltage is optimized for tunable body biasing CMOS power amplifier (PA). A two stage tunable biasing circuit is designed and integrated with class AB PA which improves variability in threshold voltage. Three most popular materials gallium arsenide, silicon and gallium nitride with two predictive technology model of 65 and 45 nm are employed for the analysis of threshold voltage optimization. A conventional single stage of tunable body biasing class AB PA is compared with a proposed PA of two stages. This concept demonstrates that threshold voltage variation can be lowered further if body biasing circuit is employed on the subsequent higher stages. The adaptive two stage body biasing design with class AB PA is analyzed with derived analytical equations. The calculated results shows gallium arsenide offers minimum variability in threshold voltage as compared to silicon and gallium nitride. Additionally, this class AB PA topology is simulated and fabricated for silicon material using 45 nm CMOS technology. The simulation results improve the robustness of the circuit in terms of performance parameters. S-parameter analysis is done that gives good agreement between simulated and measured results.

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Acknowledgments

The foundry design kit and chip Implementation is done by Film electronics Pvt ltd. We would like to thanks Mr. Kamal and Mr. Ankur kumar gupta for supporting our work during the fabrication process.

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Authors and Affiliations

  1. Department of Electronics Engineering, Indian School of Mines, Dhanbad, 826004, India

    Sandeep Kumar & Santanu Dwari

  2. Department of Electronics and Communication Engineering, Ambedkar Institute of Advanced Communication Technologies and Research, Delhi, 110031, India

    Mitul Handa, Himanshu Bhasin & Binod Kumar Kanaujia

  3. Department of Electronics and Communication Engineering, G. B. Pant Engineering College, Pauri Garhwal, Uttarakhand, 246194, India

    Anil Kumar Gautam

Authors
  1. Sandeep Kumar
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  2. Mitul Handa
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  3. Himanshu Bhasin
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  4. Binod Kumar Kanaujia
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  5. Santanu Dwari
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  6. Anil Kumar Gautam
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Correspondence to Binod Kumar Kanaujia.

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Kumar, S., Handa, M., Bhasin, H. et al. Optimized Threshold Voltage Variation for Tunable Body Biasing CMOS Power Amplifier. Wireless Pers Commun 91, 439–452 (2016). https://doi.org/10.1007/s11277-016-3469-4

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  • DOI: https://doi.org/10.1007/s11277-016-3469-4

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