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A Low-Power CMOS Transceiver in 130 nm for Wireless Sensor Network Applications

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Abstract

RF modules are responsible for major power consumptions in wireless sensor network nodes. A transceiver is the core of RF modules. A low-power RF transceiver in 130 nm at 1 v is presented for WSN applications. Bias currents of the VCO and frequency multiplier are limited to 0.07 and 0.1 mA, respectively. The LNA and mixers are designed with the current reused technique and an additional cascode transistor is also used in the LNA. Conversion gain of this transceiver is 25 dB. The P1dB is − 22.5 dB. The noise figure (NF) at 50 MHz as IF frequency is about 4.6 dB with a 0.4 mW DC power. In order to have higher efficiency and lower power in a transmitter, the power oscillator class E is used with the combination of injection locked and current reused. The PAE of a transmitter is about 50% with 10 dBm output power. The transmitter VCO and preamplifier power consumption are 112 and 798 uW, respectively. A switch antenna is implemented on a single chip in this transceiver which has a better performance as compared to previous works.

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Authors and Affiliations

  1. Department of Electrical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Iran

    A. R. Behrouj

  2. Department of Electrical Engineering, Sari Branch, Islamic Azad University, Sari, Iran

    A. R. Ghorbani

  3. Dept. of E. E., Shahed University, Tehran, Iran

    M. B. Ghaznavi-Ghoushchi & M. Jalali

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  1. A. R. Behrouj
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Correspondence to A. R. Ghorbani.

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Behrouj, A.R., Ghorbani, A.R., Ghaznavi-Ghoushchi, M.B. et al. A Low-Power CMOS Transceiver in 130 nm for Wireless Sensor Network Applications. Wireless Pers Commun 106, 1015–1039 (2019). https://doi.org/10.1007/s11277-019-06201-8

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  • DOI: https://doi.org/10.1007/s11277-019-06201-8

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