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Field emission properties of amorphous GaN ultrathin films fabricated by pulsed laser deposition

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Abstract

Amorphous gallium nitride (a-GaN) films with thicknesses of 5 and 300 nm are deposited on n-Si (100) substrates by pulsed laser deposition (PLD), and their field emission (FE) properties are studied. It shows that compared with thicker (300 nm) a-GaN film, better FE performance is obtained on ultrathin (5 nm) a-GaN film with a threshold field of 0.78 V/µm, which is the lowest value ever reported. Furthermore, the current density reaches 42 mA/cm2 when the applied field is 3.72 V/µm. These experimental results unambiguously confirm Binh’s theoretical analysis (Binh et al. Phys Rev Lett, 2000, 85(4): 864–867) that the FE performance would be prominently enhanced with the coating of an ultra-thin wide band-gap semiconductor film.

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References

  1. Yoshida H, Urushido T, Miyake H, et al. Formation of GaN Self-Organized Nanotips by Reactive Ion Etching. Jpn J Appl Phys, 2001, 40(12A): L1301–L1304

    Article  Google Scholar 

  2. Ng D K T, Hong M H, Tan L S, et al. Field emission enhancement from patterned gallium nitride nanowires. Nanotechnology, 2007, 18: 375707

    Article  Google Scholar 

  3. Hasegawa S, Nishida S, Yamashita T, et al. Polycrystalline GaN for light emitter and field electron emitter applications. Thin Solid Films, 2005, 487: 260–267

    Article  Google Scholar 

  4. Luo L Q, Yu K, Zhu Z Q, et al. Field emission from GaN nanobelts with herringbone morphology. Mater Lett, 2004, 58: 2893–2896

    Article  Google Scholar 

  5. Deb P, Westover T, Kim H Y, et al. Field emission from GaN and (Al, Ga)N/GaN nanorod heterostructures. J Vac Sci Technol B, 2007, 25(3): L15–L18

    Article  Google Scholar 

  6. Liu B D, Bando Y, Tang C C, et al. Excellent Field-Emission Properties of P-Doped GaN Nanowires. J Phys Chem B, 2005, 109(46): 21521–21524

    Article  Google Scholar 

  7. Yamashita T, Hasegawa S, Nishida S, et al. Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides. Appl Phys Lett, 2005, 86: 082109

    Article  Google Scholar 

  8. Liu E K, Zhu B S, Luo J S, et al. Semiconductor Physics (in Chinese). 4th ed. Beijing: National Defence Industry Press, 1994. 340–341

    Google Scholar 

  9. Joag D S, Late D J, Lanke U D. Field emission from a-GaN films deposited on Si (100). Solid State Commun, 2004, 130: 305–308

    Article  Google Scholar 

  10. Ye F, Xie E Q, Pan X J, et al. Field emission from amorphous GaN deposited on Si by dc sputtering. J Vac Sci Technol B, 2006, 24(3): 1358–1361

    Article  Google Scholar 

  11. Chen C Z, Bao Q H, Yao S S, et al. Plused laser deposition and its application (in Chinese). Laser Tech, 27(5): 443–446

  12. Kobayashi A, Kawano S, Kawaguchi Y, et al. Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates. Appl Phys Lett, 2007, 90: 041908

    Article  Google Scholar 

  13. Sanguino P, Niehus M, Melo L V, et al. Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/ nitrogen rf plasma. Solid State Electron, 2007, 47: 559–563

    Article  Google Scholar 

  14. Liu M, Man B Y, Xue C S, et al. The effect of nitrogen pressure on the two-step method deposition of GaN films. Appl Phys A, 2006, 85: 83–86

    Article  Google Scholar 

  15. Kobayashi A, Kawano S, Ueno K, et al. Growth of aplane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer. Appl Phys Lett, 2007, 91: 191905

    Article  Google Scholar 

  16. Yang C, Man B Y, Zhuang H Z, et al. Annealing of GaN/ZnO/Si films deposited by pulsed laser deposition. Jpn J Appl Phys, 2007, 46(2): 526–529

    Article  Google Scholar 

  17. Ye F, Xie E Q, Duan H G, et al. The influence of H2 plasma treatment on the field emission of amorphous GaN film. Appl Surf Sci, 2006, 253: 859–862

    Article  Google Scholar 

  18. Zhu W, Kochanski G P, Jin S, et al. Defect-enhanced electron field emission from chemical vapor deposited diamond. J Appl Phys, 1995, 78(4): 2707–2711

    Article  Google Scholar 

  19. Yue S L, Shi C Y, Li J J, et al. Enhanced electron field emission from oriented AlN films. J Appl Phys, 2006, 99: 094908

    Article  Google Scholar 

  20. Fowler R H, Nordheim L. Electron emission in intense electric fields. Proc Royal Soc London A, 1982, 119(781): 173–181

    Article  Google Scholar 

  21. Yilmazoglu O, Pavlidis D, Litvin Y M, et al. Field emission from quantum size GaN structures. Appl Surf Sci, 2003, 220: 46–50

    Article  Google Scholar 

  22. Binh V T, Adessi C. New mechanism for electron emission from planar cold cathodes: The solid-state field-controlled electron emitter. Phys Rev Lett, 2000, 85(4): 864–867

    Article  Google Scholar 

  23. Wang R Z, Wang B, Wang H, et al. Band bending mechanism for field emission in wide-band gap semiconductors. Appl Phys Lett, 2002, 81(15): 2782–2784

    Article  Google Scholar 

  24. Xu N S, Chen Y, Deng S Z, et al. Vacuum gap dependence of field electron emission properties of large area multi-walled carbon nanotube films. J Phys D: Appl Phys, 2001, 34: 1597–1601

    Article  Google Scholar 

  25. Chen J, Deng S Z, She J C, et al. Effect of structural parameter on field emission properties of semiconducting copper sulphide nanowire films. J Appl Phys, 2003, 93(3): 1774–1777

    Article  Google Scholar 

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Authors and Affiliations

  1. Laboratory of Thin Film, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China

    FengYing Wang, RuZhi Wang, Wei Zhao, XueMei Song, Bo Wang & Hui Yan

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  1. FengYing Wang
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  2. RuZhi Wang
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  3. Wei Zhao
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  4. XueMei Song
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  5. Bo Wang
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Correspondence to RuZhi Wang.

Additional information

Supported by the National Natural Science Foundation of China (Grant No. 10604001), and the Beijing Nora Program (Grant No. 2008B10)

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Wang, F., Wang, R., Zhao, W. et al. Field emission properties of amorphous GaN ultrathin films fabricated by pulsed laser deposition. Sci. China Ser. F-Inf. Sci. 52, 1947–1952 (2009). https://doi.org/10.1007/s11432-009-0162-1

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  • DOI: https://doi.org/10.1007/s11432-009-0162-1

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