Abstract
The radiation-hardened performances of static induction transistor (SIT) have been studied in depth in this paper. The effects of radiation of electron beam on the I–V characteristics, carrier distribution and potential distribution in the channel of SIT have been represented. A large number of electron-hole pairs are generated in the depletion region of reversely biased gate-channel PN junction. The radiation-generated electrons drift towards the drain region at high positive potential, while generated holes flow into gate region biased to the lowest potential. With the accumulation of holes in gate region, the gate potential is boosted, resulting in a decrease in the height of potential barrier in channel, and an increase in drain current. I–V characteristics of SIT in the presence of radiation have been theoretically derived, and compared with experimental results. With the increase in thickness of epitaxial layer, the radiation-hardened capability of SIT is continuously improved until the optimum thickness of 26 μm is reached. The optimum matching relationship among geometric, material and technological parameters has been represented to acquire excellent radiation-hardened performances of SIT.
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References
Bencuya I, Cogan A J, Butle S J, et al. Static induction transistors optimized for high-voltage operation and high microwave power output. IEEE Trans Electron Devic, 1985, 32: 1321–1327
Nishizawa J I, Ohmi T, Chen H L. Analysis of static characteristics of a bipolar-mode induction transistor (BSIT). IEEE Trans Electron Devic, 1982, ED-29: 1233–1244
Wang J, Williams B W. A new static induction thyristor (SITh) analytical model. IEEE Trans Power Electron, 1999, 14: 866–876
Ohnuma T, Obonai F, Hayasaka E. Development of high-frequency, high-power static induction transistor for 13 MHz band. In: Proc. 10th Int. Symp. Static Induction Transistor Devices SSID-97-6. Tokyo, 1997
Nishizawa J I, Motoyan K, Itioh A. The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation. IEEE Trans Electron Devic, 2000, 47: 482–487
Sankin V I, Shrebiy P P, Kuznetsov A N, et al. The development of ultrahigh frequency power 6HSiC vertical static induction transistor with pn junction as a gate. Mater Sci Forum, 2002, 389–393: 1407
Chen X A, Liu S, Huang Q A. A static induction device manufactured by silicon direct bonding. Semicond Sci Technol, 2004 19: 819–822
Onose H, Yatsuo T, Watanabe A, et al Design consideration for 2 kV SiCSIT, In: Proc Int Symp on Semiconductor Devices & ICs, Osaka, 2001. 179–182
Sung Y M, Casady J B. Dufrene J B, et al. A review of SiC static induction transistor development for high-frequency power amplifiers. Solid-State Electron, 2002, 46: 605–615
Wang Y S, Li S Y, Yang J H, et al. A novel burried-gate static induction transistor with diffused source region. Semiconduct Sci Tech, 2004, 19: 152–156
Wang Y S, Li H R, Wu R, et al. Mechanism of reverse snapback on I-V characteristics of power SITH with buried gate structure. Chin J Semiconduct, 2008, 29: 101–106
Wang Y S, Li S Y, Hu D Q. A microwave high power static induction transistor with double dielectrics gate structure. Chin J Semiconduct, 2004, 25: 19–25
Wang Y S, Wu R, Liu C J, et al. Improvements on high current performance of static induction transistor. Chin J Semiconduct, 2007, 28: 1192–1197
Wang Y S, Wu R, Liu C J, et al. Researches on the injected charge potential barrier occurring in the static induction transistor in the high current region. Sci Tech, 2008, 23: 152–156
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Wang, Y., Luo, X., Li, H. et al. Improvements on radiation-hardened performance of static induction transistor. Sci. China Inf. Sci. 53, 1089–1096 (2010). https://doi.org/10.1007/s11432-010-0078-9
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DOI: https://doi.org/10.1007/s11432-010-0078-9