Abstract
Due to the fact that either holes or electrons can band-to-band-tunnel (BTBT) through channelsource/drain contacts, tunneling carbon nanotube field effect transistors (T-CNFETs) suffer from ambipolar transporting characteristic. To suppress such ambipolar conductance, a novel device design based on stair-case doping strategy of drain region is proposed first in this paper. The dependences of available ON-OFF current ratio, practical ON-OFF current ratio with certain gate bias range and the average sub-threshold swing on the doping level of drain region are studied. Simulation results show that such device design can not only increase the ON-OFF current ratio largely but also result in a clear decrease of sub-threshold swing. At the same time, however, such stair-case doping strategy would broaden the depletion region and result in an increase of device area cost. Particular attention should be paid to the choice of doping level of drain region to make a proper tradeoff between power, speed and area in application.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Martel R, Wong H S, Chan K, et al. Carbon nanotube field effect transistors for logica applications. In: Proceedings of IEDM’19. Piscataway: IEEE, 2001. 159–162
Javey A, Guo J, Wang Q, et al. Ballistic carbon nanotube field-effect transistors. Nature, 2003, 424: 654–657
Appenzeller J, Knoch J, Derycke V, et al. Field-modulated carrier transport in carbon nanotube Transistors. Phys Rev Lett, 2002, 89: 1268011–1268014
Sze S M. Physics of Semiconductor Devices. New York: Wiley, 1981
Radosavljevic M, Heinze S, Tersoff J, et al. Drain voltage scaling in carbon nanotube transistors. Appl Phys Lett, 2003, 83: 2435–2437
Pourfath M, Ungersboeck E, Gehring A, et al. Numerical analysis of coaxial double gate Schottky barrier Carbon nanotube field effect transistors. J Comput Electr, 2005, 4: 75–78
Chen B H, Wei J H, Lo P Y, et al. A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects. Solid-State Electr, 2006, 50: 1341–1348
Lin Y M, Appenzeller J, Knoch J, et al. High-performance carbon nanotube field-effent transistor with tunable polarities. IEEE Trans Nanotech, 2005, 4: 481–489
Chen J, Klinke C, Afzali A, et al. Self-aligned carbon nanotube transistors with charge transfer doping. Appl Phys Lett, 2005, 86: 3108–31083
Li J Q, Zhang Q. Simulation of ambipolar-to-unipolar conversion of carbon nanotube based field effect transistors. Nanotechnology, 2005, 16: 1415–1418
Iman H, Mohammad H S, Zoheir K. Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts. Solid-State Electr, 2008, 52: 980–985
Xiao D Y, Chen G, Lee R, et al. Planar split dual gate MOSFET. Sci China Ser F-Inf Sci, 2008, 51: 440–448
Knoch J, Mantl S, Appenzeller J. Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices. Solid-State Electr, 2007, 51: 572–578
Tans S J, Verschueren A R, Dekker C. Room-temperature transistor based on a single carbon nanotube. Nature, 1998, 393: 49–52
Duclaux L. Review of the doping of carbon nanotubes (multiwalled and single-walled). Carbon, 2002, 40: 1751–1764
Zhou C, Kong J, Yenilmez E, et al. Modulated chemical doping of individual carbon nanotubes. Science, 2000, 290: 1552–1555
Ardakani A, Avouris P, Chen J, et al. US patent, 7253431, 2007-07-08
Knoch J, Appenzeller J. Tunneling phenomena in carbon nanotube field-effect transistors. Phys Stat Sol, 2000, 205: 679–694
Chen Z H, Farmer D, Xu S, et al. Externally assembled gate-all-around carbon nanotube field-effect transistor. IEEE Electr Device Lett, 2008, 29: 183–185
Nosho Y, Ohno Y, Kishimoto S, et al. Fabrication and characterization of p-i-p top-gate carbon nanotube FETs. In: International Microprocess and Nanotechnology Conference, Kanagawa, 2006. 25–27
Javey A R. Tu R, Farmer D. et al. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts, Nano Lett, 2005, 5: 345–348
Venugopal R, Ren Z, Datta S, et al. Simulating quantum transport in nanoscale transistors: real versus mode-space approaches. J Appl Phys, 2002, 92: 3730–3739
Fiori G, Iannaccone G, Klimeck G. Coupled mode space approach for the simulation of realistic carbon nanotube fieldeffect transistors. IEEE Trans Nanotech, 2007, 6: 475–480
Guo J, Ali J, Dai H J, et al. Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors. In: Proceedings of IEDM’22, Piscataway: IEEE, 2004. 703–706
Appzenzeller J, Knoch J, Avouris P. Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors. Phys Rev Lett, 2004, 92: 68021–68024
Huang R, Bu W H, Zhang X, et al. Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile. Sci China Ser F-Inf Sci, 2001, 44: 60–67
Muller R S, Kamins T I. Device Electronics for Integrated Circuits. New York: Wiley, 1986
Guo J, Datta S, Lundstrom M S, et al. Towards multiscale modeling of carbon nanotube transistors. Int J Mult Comp Eng, 2004, 2: 57–76
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Zhou, H., Jiang, J., Zhang, M. et al. Opitimization of tunneling carbon nanotube-FETs based on stair-case doping strategy. Sci. China Inf. Sci. 53, 2696–2704 (2010). https://doi.org/10.1007/s11432-010-4102-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11432-010-4102-x