Abstract
Electrostatic discharge (ESD) failure has become an emerging challenge for radio frequency (RF) integrated circuits (ICs), which requires high ESD-protection for circuit applications in harsh environment. This paper discusses the design and optimization of an ultra-wideband (UWB) correlator circuit using ESDaware simulation design technique. Mixed-mode ESD simulation-design method and RF ESD characterization technique are presented for accurate ESD device design and ESD-induced parasitic effects extraction. The impact of ESD induced parasitic is carefully considered in the whole correlator design simulation by using a direct S-parameter insertion technique. The design is based on a commercial 0.18 μm RFCMOS technology.
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Shi, Z., Wang, A. & Cheng, Y. An optimized UWB correlator design with the consideration of the impacts from the ESD protection devices. Sci. China Inf. Sci. 56, 1–9 (2013). https://doi.org/10.1007/s11432-012-4665-9
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DOI: https://doi.org/10.1007/s11432-012-4665-9