Key characterization factors of accurate power modeling for FinFET circuits

Abstract

Due to its excellent device features, manufacture process compatibility and diversity of the circuit structures, The FinFET is considered appropriate candidate for the conventional bulk-MOSFET in sub-22nm technology nodes. However, the power estimation CAD tools for FinFET are missing at the moment, which mainly results from the absence of FinFET power analysis and FinFET power model. Three key factors for FinFET power model are: the dimension of the look-up-tables, that to find out the most significant factors that influence FinFET power and to make them as indexes for the look-up-tables; the distance between sampling points; and the interpolation method. In this paper, various factors that may contribute to the FinFET power consumption are evaluated. Of all the factors, the continuous ones are compared with sensitivity method. As to other discrete factors, methods of building them in power model are given according to the features of the each factor and the way it influences the power. Based on the simulation result, standard cell power library model for FinFET is proposed. The research work lays foundation for accurate power analysis and modeling for high-level power analysis of FinFET circuits. Besides, these key factors are also crucial for low-power FinFET circuit design.

摘要

创新点

FinFET由于具有良好的器件特性、制程兼容性和多种电路结构, 被认为是在22nm以下制程工艺中替代传统体硅MOSFET最有效的器件。 然而, 针对FinFET的功耗分析在现阶段仍然缺失。 本文针对FinFET不同的电路结构特点, 采用PTM 32nm FinFETs模型在HSpice上进行了详尽的功耗来源与影响因素分析: 针对电路连接模式、背栅电压、输入信号歪斜、输出电容负载、电路输入状态、以前的状态、时序动作、温度等一些可能对功耗造成影响的因素进行了一一探讨。 需要特别关注的是, 与体硅MOSFET相比, 双栅FinFET器件的阈值电压增加了一个背栅电压的控制量, 本文针对这一FinFET特点进行了着重探讨。 通过量化和比较所有的功耗影响因素, 改进了已有的功耗库模型。 本文对于低功耗设计人员与CAD软件设计人员具有指导和借鉴意义。