This is a preview of subscription content, log in via an institution to check access.
References
Inguimbert C, Ecoffet R, Falguere D. Electron induced SEUs: microdosimetry in nanometric volumes. IEEE Trans Nucl Sci, 2015, 62: 2846–2852
Zhao Y, Wang L, Yue S, et al. SEU and SET of 65 nm Bulk CMOS flip-flops and their implications for RHBD. IEEE Trans Nucl Sci, 2015, 62: 2666–2672
Zhao X Y, Wang L, Yue S G. Single event transients of scan flip-flop and an SET-immune redundant delay filter (RDF). In: Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Oxford, 2013. 1–5
Yue S, Zhang X, Zhao X. Single event transient pulse width measurement of 65-nm bulk CMOS circuits. J Semicond, 2015, 36: 115006
Jagannathan S, Gadlage M J, Bhuva B L, et al. Independent measurement of SET pulse widths from N-hits and P-hits in 65-nm CMOS. IEEE Trans Nucl Sci, 2010, 57: 3386–3391
Cannon E H, Cabanas-Holmen M. Heavy ion and high energy proton-induced single event transients in 90 nm inverter, NAND and NOR gates. IEEE Trans Nucl Sci, 2009, 56: 3511–3518
Clemens M A, Hooten N C, Ramachandran V, et al. The effect of high-z materials on proton-induced charge collection. IEEE Trans Nucl Sci, 2010, 57: 3212–3218
Acknowledgements
This work was supported in part by the National Natural Science Foundation of China (Grant Nos. 11690045, 61674015).
Author information
Authors and Affiliations
Corresponding author
Additional information
The authors declare that they have no conflict of interest.
Rights and permissions
About this article
Cite this article
Liu, J., Zhao, Y., Wang, L. et al. High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. Sci. China Inf. Sci. 60, 120405 (2017). https://doi.org/10.1007/s11432-017-9254-2
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-017-9254-2