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GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61534004, 60806033, 61474004), National High Technology Research and Development Program of China (Grant No. 2015AA016501), and National Key Research and Development Plan (Grant No. 2016YFA0200504).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, 100871, China

    Bingxin Zhang, Xia An, Xiangyang Hu, Ming Li, Xing Zhang & Ru Huang

Authors
  1. Bingxin Zhang
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  2. Xia An
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  3. Xiangyang Hu
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  4. Ming Li
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  5. Xing Zhang
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  6. Ru Huang
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Corresponding authors

Correspondence to Xia An or Ru Huang.

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Supporting information Appendix A. The supporting information is available online at info.scichina. com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Zhang, B., An, X., Hu, X. et al. GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs. Sci. China Inf. Sci. 61, 069405 (2018). https://doi.org/10.1007/s11432-017-9264-0

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  • DOI: https://doi.org/10.1007/s11432-017-9264-0

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