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A W-band wideband power amplifier using out-of-phase divider in 0.13-μm SiGe BiCMOS

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61331006, 61601121), and Nature Science Foundation of Jiangsu Province (Grant No. BK20150638). The authors would like to thank the Milliway Microelectronics Corporation, Nanjing, China for providing the chip fabrication.

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Authors and Affiliations

  1. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, 210096, China

    Debin Hou, Wei Hong, Jixin Chen & Zhe Song

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  1. Debin Hou
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  2. Wei Hong
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  3. Jixin Chen
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  4. Zhe Song
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Correspondence to Debin Hou.

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Hou, D., Hong, W., Chen, J. et al. A W-band wideband power amplifier using out-of-phase divider in 0.13-μm SiGe BiCMOS. Sci. China Inf. Sci. 61, 129401 (2018). https://doi.org/10.1007/s11432-017-9443-1

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  • DOI: https://doi.org/10.1007/s11432-017-9443-1

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