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Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime

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Abstract

This paper proposes a systematic procedure to calibrate the parameters of the drift-diffusion (DD) model for a performance evaluation of InGaAs MOSFETs in the quasi-ballistic regime. The simulation results of a deterministic multi-subband Boltzmann transport equation (BTE) solver serve as the standard. The DD model is calibrated both under low and high electric fields. The electrostatic characteristics, low field mobility model, and high field saturation model are calibrated in proper sequence, and a good agreement among the drive current, carrier distribution, and velocity distribution are achieved between the results of the calibrated DD model and the BTE solver. The proposed calibration procedure can also be employed in devices made of other materials.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, 61404005).

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Shaoyan Di, Lei Shen, Pengying Chang, Kai Zhao, Gang Du & Xiaoyan Liu

  2. CAPT, HEDPS, IFSA Collaborative Innovation Center of MoE, LMAM and School of Mathematical Sciences, Peking University, Beijing, 100010, China

    Tiao Lu

  3. School of Information and Communication, Beijing Information Science and Technology University, Beijing, 100871, China

    Kai Zhao

Authors
  1. Shaoyan Di
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  2. Lei Shen
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  3. Pengying Chang
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  4. Kai Zhao
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  5. Tiao Lu
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  6. Gang Du
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  7. Xiaoyan Liu
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Correspondence to Kai Zhao or Xiaoyan Liu.

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Di, S., Shen, L., Chang, P. et al. Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime. Sci. China Inf. Sci. 62, 62406 (2019). https://doi.org/10.1007/s11432-017-9472-x

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  • DOI: https://doi.org/10.1007/s11432-017-9472-x

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