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References
Asenov A, Kaya S, Brown A R. Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness. IEEE Trans Electron Dev, 2003, 50: 1254–1260
Balasubramanian A, Fleming P R, Bhuva B L, et al. Effects of random dopant fluctuations (RDF) on the single event vulnerability of 90 and 65 nm CMOS technologies. IEEE Trans Nucl Sci, 2007, 54: 2400–2406
Wang T Q, Xiao L Y, Zhou B, et al. Analysis of process variations impact on the single-event transient quenching in 65 nm CMOS combinational circuits. Sci China Technol Sci, 2014, 57: 322–331
Kauppila A V, Bhuva B L, Kauppila J S, et al. Impact of process variations on SRAM single event upsets. IEEE Trans Nucl Sci, 2011, 58: 834–839
Kauppila A V, Ball D R, Bhuva B L, et al. Impact of process variations on upset reversal in a 65 nm flipflop. IEEE Trans Nucl Sci, 2012, 59: 886–892
Wang T Q, Xiao L Y, Huo M X, et al. Single-event upset prediction in SRAMs account for on-transistor sensitive volume. IEEE Trans Nucl Sci, 2015, 62: 3207–3215
Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 61704039, 61771167), Natural Science Foundation of Heilongjiang Province (Grant No. QC2017073), Science and Technology Innovation Foundation of Harbin (Grant No. 2016RAQXJ068), Fundamental Research Funds for the Central Universities (Grant No. HIT. NSRIF. 2018.09), and the “111 project” (Grant No. B18017).
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Huo, M., Ma, G., Zhou, B. et al. Single-event upset prediction in static random access memory cell account for parameter variations. Sci. China Inf. Sci. 62, 69404 (2019). https://doi.org/10.1007/s11432-018-9561-9
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DOI: https://doi.org/10.1007/s11432-018-9561-9