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Fully coupled electrothermal simulation of resistive random access memory (RRAM) array

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61431014, 61504121, 61874038, 61971375) and the Science Challenge Project (Grant No. TZ2018002).

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Authors and Affiliations

  1. College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, 310058, China

    Da-Wei Wang, Wenchao Chen, Hao Xie & Wen-Yan Yin

  2. School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China

    Wen-Sheng Zhao

  3. ZJU-UIUC Institute, International Campus, Zhejiang University, Hangzhou, 314400, China

    Wenchao Chen

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  1. Da-Wei Wang
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  2. Wen-Sheng Zhao
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  3. Wenchao Chen
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  4. Hao Xie
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  5. Wen-Yan Yin
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Corresponding author

Correspondence to Wen-Yan Yin.

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Wang, DW., Zhao, WS., Chen, W. et al. Fully coupled electrothermal simulation of resistive random access memory (RRAM) array. Sci. China Inf. Sci. 63, 189401 (2020). https://doi.org/10.1007/s11432-019-2667-5

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  • DOI: https://doi.org/10.1007/s11432-019-2667-5

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