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High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC)

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Acknowledgements

This work was supported in part by National 02 Major Project (Grant No. 2017ZX02315-001-004), National Key Research and Development Plan (Grant No. 2016YFA0200504), Program of National Natural Science Foundation of China (Grant No. 61421005), and the 111 Project (Grant No. B18001).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, 100871, China

    Yuancheng Yang, Baotong Zhang, Xiaoqiao Dong, Xiaokang Li, Shuang Sun, Qifeng Cai, Ran Bi, Xiaoyan Xu, Ming Li & Ru Huang

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  1. Yuancheng Yang
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  2. Baotong Zhang
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  3. Xiaoqiao Dong
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  4. Xiaokang Li
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  5. Shuang Sun
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  6. Qifeng Cai
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  7. Ran Bi
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  8. Xiaoyan Xu
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  9. Ming Li
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  10. Ru Huang
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Corresponding author

Correspondence to Ming Li.

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Yang, Y., Zhang, B., Dong, X. et al. High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC). Sci. China Inf. Sci. 63, 229401 (2020). https://doi.org/10.1007/s11432-019-2700-1

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  • DOI: https://doi.org/10.1007/s11432-019-2700-1

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