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Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 2019B010145001, 616340084, 61821091, 61888102).

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Authors and Affiliations

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Huaxiang Yin, Qiuxia Xu & Wenwu Wang

  2. School of Microelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China

    Guoliang Tian, Jinshun Bi, Gaobo Xu, Xueqin Yang, Huaxiang Yin & Wenwu Wang

  3. Department of Physics, ICFAI School of Science, ICFAI University Tripura, Agartala, 799210, India

    Majumdar Sandip

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  1. Guoliang Tian
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  2. Jinshun Bi
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  3. Gaobo Xu
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  4. Kai Xi
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  7. Huaxiang Yin
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  8. Qiuxia Xu
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  9. Wenwu Wang
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Corresponding authors

Correspondence to Jinshun Bi or Gaobo Xu.

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Tian, G., Bi, J., Xu, G. et al. Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63, 229403 (2020). https://doi.org/10.1007/s11432-019-2716-5

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  • DOI: https://doi.org/10.1007/s11432-019-2716-5

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