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Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design

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References

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant No. 616340084).

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Authors and Affiliations

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Jianjian Wang, Jinshun Bi, Kai Xi, Bo Li, Sandip Majumdar, Lanlong Ji & Ming Liu

  2. School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin, 300387, China

    Jianjian Wang & Hua Bai

  3. Beijing Relitech Co., Ltd., Beijing, 100015, China

    Gang Liu

  4. Department of Science and Technology, ICFAI University Tripura, Agartala, 799210, India

    Sandip Majumdar

  5. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, 510610, China

    Zhangang Zhang

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  1. Jianjian Wang
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  2. Jinshun Bi
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  3. Gang Liu
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  4. Hua Bai
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  7. Sandip Majumdar
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  8. Lanlong Ji
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  9. Ming Liu
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  10. Zhangang Zhang
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Corresponding author

Correspondence to Jinshun Bi.

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Wang, J., Bi, J., Liu, G. et al. Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. Sci. China Inf. Sci. 64, 149401 (2021). https://doi.org/10.1007/s11432-019-2854-9

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  • DOI: https://doi.org/10.1007/s11432-019-2854-9

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