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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

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References

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Acknowledgements

This work was financially supported by National Key Project of Science and Technology of China (Grant Nos. 2017ZX02315001-002, 2019ZX02303).

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Authors and Affiliations

  1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Hong Yang, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang & Tianchun Ye

  2. School of Microelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China

    Hong Yang, Luwei Qi, Huaxiang Yin & Wenwu Wang

  3. National Space Science Center, Chinese Academy of Sciences, Beijing, 100190, China

    Luwei Qi

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  1. Hong Yang
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  2. Luwei Qi
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  3. Yanbo Zhang
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Correspondence to Huaxiang Yin or Wenwu Wang.

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Yang, H., Qi, L., Zhang, Y. et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci. China Inf. Sci. 63, 129403 (2020). https://doi.org/10.1007/s11432-019-9875-2

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  • DOI: https://doi.org/10.1007/s11432-019-9875-2

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