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Design of a high-performance 12T SRAM cell for single event upset tolerance

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References

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Acknowledgements

This work was supported by the Innovation Foundation of Harbin Institute of Technology (Grant Nos. HIT.NSRIF.2019007, 20190028).

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Authors and Affiliations

  1. Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, Harbin, 150001, China

    Chunhua Qi, Yanqing Zhang, Guoliang Ma, Chaoming Liu, Tianqi Wang, Liyi Xiao & Mingxue Huo

  2. School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, 150001, China

    Guofu Zhai

Authors
  1. Chunhua Qi
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  2. Yanqing Zhang
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  3. Guoliang Ma
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  4. Chaoming Liu
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  5. Tianqi Wang
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  6. Liyi Xiao
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  7. Mingxue Huo
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  8. Guofu Zhai
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Corresponding authors

Correspondence to Mingxue Huo or Guofu Zhai.

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Conclusion

This study proposed a lower power RHBD HP12T SRAM cell. We obtained the following results about HP12T SRAM cell: (1) it can successfully complete normal access and hold operations; (2) it can tolerate heavy-ion striking with LET = 99.8 MeV-cm2/mg even though the charge-sharing effect is considered; (3) it has lower power consumption and comparable access time and SNMs when compared with classical and state-of-the-art SRAM cells.

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Qi, C., Zhang, Y., Ma, G. et al. Design of a high-performance 12T SRAM cell for single event upset tolerance. Sci. China Inf. Sci. 64, 219401 (2021). https://doi.org/10.1007/s11432-020-3123-2

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  • DOI: https://doi.org/10.1007/s11432-020-3123-2

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