Abstract
In this paper, Schottky-drain reverse-blocking AlN/AlGaN HEMTs with drain field plate (FP) have been investigated by Silvaco-ATLAS tools. For HEMTs without FP, with the increase of Al mole fraction in AlGaN channel from 0 to 0.5, the reverse-blocking voltage increases from −158 V to −720 V. By using the drain field plate technique, a second electric field peak is introduced and the reverse-blocking voltage can be improved. Combined with the optimization of the SiN passivation thickness, optimal electric field management can be achieved to obtain the highest reverse-blocking voltage devices. Since HEMTs with different Al mole fractions possess different critical electric field values, the optimal SiN thickness are varied. With the increase of the Al mole fraction from 0 to 0.5, the reverse-blocking voltage increases from −510 V to −4500 V for HEMTs using drain FP and optimal SiN passivation thickness, and a high power figure-of-merit of 1.171 GW/cm2 is achieved. AlGaN channel HEMTs with Al mole fraction demonstrate great potential for power applications.
Similar content being viewed by others
References
Wu Y H, Zhang J C, Zhao S L, et al. More than 3000 V reverse blocking Schottky-drain AlGaN-channel HEMTs With > 230 MW/cm2 power figure-of-merit. IEEE Electron Device Lett, 2019, 40: 1724–1727
Chen K J, Häberlen O, Lidow A, et al. GaN-on-Si power technology: devices and applications. IEEE Trans Electron Dev, 2017, 64: 779–795
Lei J, Wei J, Tang G, et al. Reverse-blocking normally-OFF GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance. IEEE Electron Device Lett, 2018, 39: 1003–1006
Ma J, Zhu M H, Matioli E. 900 V reverse-blocking GaN-on-Si MOSHEMTs with a hybrid tri-anode Schottky drain. IEEE Electron Device Lett, 2017, 38: 1704–1707
Zhou C H, Chen W, Piner E L, et al. Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability. IEEE Electron Device Lett, 2010, 31: 668–670
Bahat-Treidel E, Lossy R, Wurfl J, et al. AlGaN/GaN HEMT with integrated recessed Schottky-drain protection diode. IEEE Electron Device Lett, 2009, 30: 901–903
Kabemura T, Ueda S, Kawada Y, et al. Enhancement of breakdown voltage in AlGaN/GaN HEMTs: field plate plus high k passivation layer and high acceptor density in buffer layer. IEEE Trans Electron Device, 2018, 65: 3848–3854
Xie G, Xu E, Lee J M, et al. Breakdown-voltage-enhancement technique for RF-based AlGaN/GaN HEMTs with a source-connected air-bridge field plate. IEEE Electron Device Lett, 2012, 33: 670–672
Xing H L, Dora Y, Chini A, et al. High breakdown voltage AlGaN GaN HEMTs achieved by multiple field plates. IEEE Electron Device Lett, 2004, 25: 161–163
Nanjo T, Imai A, Suzuki Y, et al. AlGaN channel HEMT with extremely high breakdown voltage. IEEE Trans Electron Device, 2013, 60: 1046–1053
Choi Y C, Pophristic M, Cha H Y, et al. The effect of an Fe-doped GaN buffer on OFF state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate. IEEE Trans Electron Device, 2006, 53: 2926–2931
Lei J, Wei J, Tang G, et al. Reverse-blocking normally-OFF GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance. IEEE Electron Device Lett, 2018, 39: 1003–1006
Ma J, Zhu M, Matioli E. 900 V reverse-blocking GaN-on-Si MOSHEMTs with a hybrid tri-anode Schottky drain. IEEE Electron Device Lett, 2017, 38: 1704–1707
Ando Y, Okamoto Y, Miyamoto H, et al. 10-W/mm AlGaN-GaN HFET with a field modulating plate. IEEE Electron Device Lett, 2003, 24: 289–291
Smorchkova I P, Keller S, Heikman S, et al. Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers. Appl Phys Lett, 2000, 77: 3998–4000
Li G W, Cao Y, Xing H G, et al. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers. Appl Phys Lett, 2010, 97: 222110
Bajaj S, Hung T H, Akyol F, et al. Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage. Appl Phys Lett, 2014, 105: 263503
Acknowledgements
This work was supported by Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174001), National Key Science and Technology Special Project (Grant No. 2019ZX01001101-010), Wuhu and Xidian University Special Fund for Industry- University- Research Cooperation (Grant No. XWYCXY-012019002), Fundamental Research Funds for the Central Universities (Grand No. JB181104), and Key Research and Development Program in Shaanxi Province (Grant No. 2016KTZDGY-03-01).
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Zhao, D., Wu, Z., Duan, C. et al. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Sci. China Inf. Sci. 65, 122401 (2022). https://doi.org/10.1007/s11432-020-3166-9
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-020-3166-9