Skip to main content

Advertisement

Springer Nature Link
Log in

Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films

  • Research Paper
  • Published:
Science China Information Sciences Aims and scope Submit manuscript

Abstract

Gold-enhanced mechanical exfoliation method attracts broad interests in recent years, which has been widely used for preparing large-area and high-quality 2D single crystals. Even many calculations predict that there is strong interaction between Au film and the exfoliated 2D crystals, direct experimental evidence is still lacking. Here, we perform Raman spectroscopy measurements for few layer MoS2 with and without Au film underneath. The main peaks of MoS2 on Au film show no obvious change at higher frequency, however, the breathing and shear modes at low-frequency are suppressed, especially for breathing modes. In contrast, both breathing modes and shear modes can be detected on suspended MoS2 and the samples are transferred from Au film to SiO2/Si. These comparison results provide direct evidence for the existence of covalent-like quasi-bonding at the interface of Au film and the exfoliated MoS2 crystal. This MoS2/Au interface interaction presents a special pinning-effect for low-frequency rigid vibration. Similar pinning-effect is also discovered in WS2/Au system. Our work reports the suppression of low-frequency Raman modes of MoS2, WS2 on Au film, which will deliver new inspiration for studying other interactions between layered materials and solid surfaces.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
$34.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or eBook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Dai Z H, Liu L Q, Zhang Z. Strain engineering of 2D materials: issues and opportunities at the interface. Adv Mater, 2019, 31: 1805417

    Article  Google Scholar 

  2. Wang B, Li Z C, Wang C H, et al. Folding large graphene-on-polymer films yields laminated composites with enhanced mechanical performance. Adv Mater, 2018, 30: 1707449

    Article  Google Scholar 

  3. Mak K F, Lee C, Hone J, et al. Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett, 2010, 105: 136805

    Article  Google Scholar 

  4. Álvarez-Pérez G, Folland T G, Errea I, et al. Infrared permittivity of the biaxial van der waals semiconductor alpha-MoO3 from near- and far-field correlative studies. Adv Mater, 2020, 32: 1908176

    Article  Google Scholar 

  5. Neto A H C, Guinea F, Peres N M R, et al. The electronic properties of graphene. Rev Mod Phys, 2009, 81: 109–162

    Article  Google Scholar 

  6. Qin S Y, Kim J, Niu Q, et al. Superconductivity at the two-dimensional limit. Science, 2009, 324: 1314–1317

    Article  Google Scholar 

  7. Radisavljevic B, Radenovic A, Brivio J, et al. Single-layer MoS2 transistors. Nat Nanotech, 2011, 6: 147–150

    Article  Google Scholar 

  8. Li N, Wang Q Q, Shen C, et al. Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors. Nat Electron, 2020, 3: 711–717

    Article  Google Scholar 

  9. Yu H, Liao M Z, Zhao W J, et al. Wafer-scale growth and transfer of highly-oriented monolayer MoS2 continuous films. ACS Nano, 2017, 11: 12001–12007

    Article  Google Scholar 

  10. Novoselov K S, Geim A K, Morozov S V, et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature, 2005, 438: 197–200

    Article  Google Scholar 

  11. Huang Y, Sutter E, Shi N N, et al. Reliable exfoliation of large-area high-quality flakes of graphene and other two-dimensional materials. ACS Nano, 2015, 9: 10612–10620

    Article  Google Scholar 

  12. Huang Y, Pan Y H, Yang R, et al. Universal mechanical exfoliation of large-area 2D crystals. Nat Commun, 2020, 11: 2453

    Article  Google Scholar 

  13. Novoselov K S, Jiang Z, Zhang Y, et al. Room-temperature quantum hall effect in graphene. Science, 2007, 315: 1379

    Article  Google Scholar 

  14. Cao Y, Fatemi V, Fang S, et al. Unconventional superconductivity in magic-angle graphene superlattices. Nature, 2018, 556: 43–50

    Article  Google Scholar 

  15. Zhao W J, Ribeiro R M, Toh M L, et al. Origin of indirect optical transitions in few-layer MoS2, WS2, and WSe2. Nano Lett, 2013, 13: 5627–5634

    Article  Google Scholar 

  16. Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306: 666–669

    Article  Google Scholar 

  17. Velický M, Donnelly G E, Hendren W R, et al. Mechanism of gold-assisted exfoliation of centimeter-sized transition-metal dichalcogenide monolayers. ACS Nano, 2018, 12: 10463–10472

    Article  Google Scholar 

  18. Magda G Z, Peto J, Dobrik G, et al. Exfoliation of large-area transition metal chalcogenide single layers. Sci Rep, 2015, 5: 14714

    Article  Google Scholar 

  19. Desai S B, Madhvapathy S R, Amani M, et al. Gold-mediated exfoliation of ultralarge optoelectronically-perfect monolayers. Adv Mater, 2016, 28: 4053–4058

    Article  Google Scholar 

  20. Qiao J S, Kong X H, Hu Z X, et al. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat Commun, 2014, 5: 4475

    Article  Google Scholar 

  21. Hu Z X, Kong X H, Qiao J S, et al. Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus. Nanoscale, 2016, 8: 2740–2750

    Article  Google Scholar 

  22. Zhao Y D, Qiao J S, Yu P, et al. Extraordinarily strong interlayer interaction in 2D layered PtS2. Adv Mater, 2016, 28: 2399–2407

    Article  Google Scholar 

  23. Zhao Y D, Qiao J S, Yu Z, et al. High-electron-mobility and air-stable 2D layered PtSe2 FETs. Adv Mater, 2017, 29: 1604230

    Article  Google Scholar 

  24. Wang C, Zhou X Y, Pan Y H, et al. Layer and doping tunable ferromagnetic order in two-dimensional CrS2 layers. Phys Rev B, 2018, 97: 245409

    Article  Google Scholar 

  25. Hao Y, Wang Y, Wang L, et al. Probing layer number and stacking order of few-layer graphene by raman spectroscopy. Small, 2010, 6: 195–200

    Article  Google Scholar 

  26. Huang Y, Wang X, Zhang X, et al. Raman spectral band oscillations in large graphene bubbles. Phys Rev Lett, 2018, 120: 186104

    Article  Google Scholar 

  27. Cançado L G, Jorio A, Ferreira E H M, et al. Quantifying defects in graphene via raman spectroscopy at different excitation energies. Nano Lett, 2011, 11: 3190–3196

    Article  Google Scholar 

  28. Zhang X, Han W P, Wu J B, et al. Raman spectroscopy of shear and layer breathing modes in multilayer MoS2. Phys Rev B, 2013, 87: 115413

    Article  Google Scholar 

  29. Ferrari A C. Raman spectroscopy of graphene and graphite: disorder, electron phonon coupling, doping and nonadiabatic effects. Solid State Commun, 2007, 143: 47–57

    Article  Google Scholar 

  30. Tan P H, Han W P, Zhao W J, et al. The shear mode of multilayer graphene. Nat Mater, 2012, 11: 294–300

    Article  Google Scholar 

  31. Lui C H, Malard L M, Kim S H, et al. Observation of layer-breathing mode vibrations in few-layer graphene through combination raman scattering. Nano Lett, 2012, 12: 5539–5544

    Article  Google Scholar 

  32. Li H, Zhang Q, Yap C C R, et al. From bulk to monolayer MoS2: evolution of Raman scattering. Adv Funct Mater, 2012, 22: 1385–1390

    Article  Google Scholar 

  33. Sandoval S J, Yang D, Frindt R F, et al. Raman study and lattice dynamics of single molecular layers of MoS2. Phys Rev B, 1991, 44: 3955–3962

    Article  Google Scholar 

  34. Molina-Sáynchez A, Wirtz L. Phonons in single-layer and few-layer MoS2 and WS2. Phys Rev B, 2011, 84: 155413

    Article  Google Scholar 

  35. Qiao J S, Pan Y H, Yang F, et al. Few-layer tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties. Sci Bull, 2018, 63: 159–168

    Article  Google Scholar 

  36. Huang Y, Sutter E, Sadowski J T, et al. Tin disulfide—an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics. ACS Nano, 2014, 8: 10743–10755

    Article  Google Scholar 

  37. Ni Z H, Yu T, Lu Y H, et al. Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening. ACS Nano, 2008, 2: 2301–2305

    Article  Google Scholar 

  38. Zeng H L, Zhu B R, Liu K, et al. Low-frequency Raman modes and electronic excitations in atomically thin MoS2 films. Phys Rev B, 2012, 86: 241301

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by National Key Research and Development Program of China (Grant Nos. 2019YFA0308000, 2018YFA0704201, 2019YFA0307801), National Natural Science Foundation of China (Grants Nos. 11874405, 62022089, 61971035, 61725107, 11974001, U1932153), Youth Innovation Promotion Association of CAS (Grants No. 2019007), Beijing Natural Science Foundation (Grants Nos. 2192022, Z190011), and Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB33000000). We thank Prof. Ping-Heng TAN and Dr. Miaoling LIN for discussion and valuable comments.

Author information

Author notes

  1. Huang X Y and Zhang L have the same contribution to this work.

Authors and Affiliations

  1. Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Xinyu Huang, Lei Zhang, Yang Qin, Qiang Fu, Qiong Wu, Rong Yang, Xingjiang Zhou & Yuan Huang

  2. Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China

    Xinyu Huang & Lei Liu

  3. College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing, 100124, China

    Lei Zhang & Qiong Wu

  4. School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China

    Liwei Liu & Yeliang Wang

  5. School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Yang Qin

  6. School of Physics, Southeast University, Nanjing, 211189, China

    Qiang Fu, Jun-Peng Lv & Zhenhua Ni

  7. Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing, 100872, China

    Wei Ji

  8. Songshan Lake Materials Laboratory, Dongguan, 523808, China

    Yuan Huang

Authors
  1. Xinyu Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Lei Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Liwei Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Yang Qin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Qiang Fu
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Qiong Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Rong Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Jun-Peng Lv
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Zhenhua Ni
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. Lei Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. Wei Ji
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. Yeliang Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  13. Xingjiang Zhou
    View author publications

    You can also search for this author in PubMed Google Scholar

  14. Yuan Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Liwei Liu, Lei Liu or Yuan Huang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Huang, X., Zhang, L., Liu, L. et al. Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films. Sci. China Inf. Sci. 64, 140406 (2021). https://doi.org/10.1007/s11432-020-3173-9

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11432-020-3173-9

Keywords