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Acknowledgements
This work was supported in part by the Key Research and Development Program of Shaanxi (Grant No. 2020ZDLGY03-05), Key-Area Resarch and Development Program of Guangdong Province (Grant No. 2020B010174001), and National Natural Science Foundation of China (Grant Nos. 61574112, 61974115).
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Wang, H., Mao, W., Zhao, S. et al. Unidirectional p-GaN gate HEMT with composite source-drain field plates. Sci. China Inf. Sci. 65, 129405 (2022). https://doi.org/10.1007/s11432-021-3267-3
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DOI: https://doi.org/10.1007/s11432-021-3267-3