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Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate

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References

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Acknowledgements

This work was supported by National Key Research and Development Program of China (Grant No. 2016YFB0400502) and Postdoctoral Innovative Talent Support Program (Grant No. BX20190059).

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Authors and Affiliations

  1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Xiaorong Luo, Junyue Huang, Xu Song, Qinfeng Jiang, Jie Wei & Jian Fang

  2. Global Energy Interconnection Research Institute, Beijing, 102209, China

    Fei Yang

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  1. Xiaorong Luo
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  2. Junyue Huang
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  3. Xu Song
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  4. Qinfeng Jiang
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  5. Jie Wei
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  6. Jian Fang
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  7. Fei Yang
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Correspondence to Xiaorong Luo.

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Luo, X., Huang, J., Song, X. et al. Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate. Sci. China Inf. Sci. 65, 169404 (2022). https://doi.org/10.1007/s11432-021-3324-0

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  • DOI: https://doi.org/10.1007/s11432-021-3324-0

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