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IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics

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Abstract

Temperature is one of the vital influential factors for all physiological and mental activities. Studying the influence of temperature on the properties of synaptic devices is of great importance for neuromorphic computing and bionic perception. Here, indium-gallium-zinc-oxide (IGZO) based electrical-double-layer neuromorphic transistors were proposed for the emulation of temperature-dependent synaptic functions. The influence of temperature on the synaptic plasticity, including excitatory postsynaptic current, paired-pulse facilitation, and dynamic filtering was investigated. Interestingly, temperature induced spiking AND to OR logic switching was demonstrated in an IGZO-based neuromorphic transistor with two in-plane gate electrodes. Our results provided an insight into the temperature-induced synaptic functions and spiking logic switching, which is interesting for neuromorphic systems with biological fidelity.

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Acknowledgements

This work was supported by National Key R&D Program of China (Grant No. 2019YFB2205400).

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Authors and Affiliations

  1. School of Electronic & Science Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China

    Ying Zhu, Yongli He, Chunsheng Chen, Li Zhu, Changjin Wan & Qing Wan

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  1. Ying Zhu
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  2. Yongli He
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  3. Chunsheng Chen
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  4. Li Zhu
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  5. Changjin Wan
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  6. Qing Wan
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Correspondence to Changjin Wan or Qing Wan.

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Zhu, Y., He, Y., Chen, C. et al. IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics. Sci. China Inf. Sci. 65, 162401 (2022). https://doi.org/10.1007/s11432-021-3326-6

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  • DOI: https://doi.org/10.1007/s11432-021-3326-6

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