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Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates

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Abstract

The magnetic properties in substrate/Pt/Co multilayers, such as perpendicular magnetic anisotropy (PMA), are of particular interest for spintronic devices. In particular, it is important to obtain a strong PMA on the flexible substrate in the field of wearable devices and structural health monitoring. However, the different stacks deposition and regulation conditions on the magnetic properties of the films lack systematic research. Here, we investigate the magnetic properties in Pt/Co structures with different hard and flexible substrates, layer thicknesses, and the different deposition temperatures of the buffer layer. We found that the coercive field and magnetodynamic behavior of the films change with these factors. Moreover, depositing the buffer layer under high temperature can effectively adjust the crystalline state of the films, thus affecting the performance of the films. After depositing the buffer layer at 800°C, our films can obtain a better crystalline state and PMA. The measurement results of the magneto-optical Kerr microscope show that the magnetic domain wall motion of the films can be controlled by different substrate and buffer layer conditions. It was expected that ultra-fast magnetic moment switching can be achieved by optimizing the conditions to reduce the power consumption of the device. The experimental results also show that the optimized film conditions can also obtain strong PMA on the flexible substrate. These findings help to understand magnetic properties in these structures and show the promising prospect for wearable devices and other spintronic devices.

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Acknowledgements

This work was supported by National Key R&D Program of China (Grant No. 2018YFB0407602), Science and Technology Major Project of Anhui Province (Grant No. 202003a05020050), National Natural Science Foundation of China (Grant Nos. 61627813, 61571023), International Collaboration Project (Grant No. B16001), National Key Technology Program of China (Grant No. 2017ZX01032101), and Beihang Hefei Innovation Research Institute Project (Grant Nos. BHKX-19-01, BHKX-19-02).

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Author notes

  1. Eimer S and Cheng H Y have the same contribution to this work.

Authors and Affiliations

  1. Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei, 230013, China

    Sylvain Eimer, Houyi Cheng & Weisheng Zhao

  2. Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China

    Sylvain Eimer, Houyi Cheng, Xueying Zhang & Weisheng Zhao

  3. Truth Instruments Co. Ltd., Qingdao, 266000, China

    Xueying Zhang

  4. Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao, 266000, China

    Xueying Zhang & Weisheng Zhao

  5. School of Physics and Quantum Information Research Center, Southeast University, Nanjing, 211189, China

    Jinji Li

  6. Beijing Superstring Academy of Memory Technology, Beijing, 100176, China

    Chao Zhao

Authors
  1. Sylvain Eimer
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  3. Jinji Li
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  4. Xueying Zhang
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Corresponding authors

Correspondence to Sylvain Eimer, Xueying Zhang or Weisheng Zhao.

Additional information

Supporting information Appendix A: HR-TEM results in Ta/Pt/Co/Pt stacks. Appendix B: more magneto-optical Kerr microscope test images. The supporting information is available online at https://info.scichina.com and https://link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates

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Eimer, S., Cheng, H., Li, J. et al. Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates. Sci. China Inf. Sci. 66, 122408 (2023). https://doi.org/10.1007/s11432-021-3371-4

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