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Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61421005, 61927901, 61434007) and 111 Project (Grant No. B18001).

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Jingyi Liu, Xia An, Gensong Li, Zhexuan Ren, Ming Li, Xing Zhang & Ru Huang

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  1. Jingyi Liu
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  2. Xia An
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  3. Gensong Li
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  4. Zhexuan Ren
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  5. Ming Li
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  6. Xing Zhang
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  7. Ru Huang
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Correspondence to Xia An.

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Liu, J., An, X., Li, G. et al. Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence. Sci. China Inf. Sci. 65, 189402 (2022). https://doi.org/10.1007/s11432-021-3372-2

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  • DOI: https://doi.org/10.1007/s11432-021-3372-2

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