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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes

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Acknowledgements

This work was supported in part by National Science and Technology Major Project of China (Grant No. 2017YFA0206102), National Natural Science Foundation of China (Grant Nos. 61922083, 61804167, 61834009, 61904200, 61821091), Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000), Project funded by China Postdoctoral Science Foundation (Grant No. 2020M670492), and Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

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Authors and Affiliations

  1. Key Laboratory of Microelectronics Devices and Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Haoran Yu, Tiancheng Gong, Peng Yuan, Yuan Wang, Zhaomeng Gao, Xiaoxin Xu, Jianfeng Gao, Junfeng Li & Qing Luo

  2. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, China

    Ying Sun, Ran Cheng & Bing Chen

  3. University of Chinese Academy of Sciences, Beijing, 100049, China

    Tiancheng Gong, Peng Yuan, Yuan Wang & Zhaomeng Gao

Authors
  1. Haoran Yu
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  2. Tiancheng Gong
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  3. Peng Yuan
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  4. Yuan Wang
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  5. Zhaomeng Gao
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  6. Xiaoxin Xu
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  7. Ying Sun
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  8. Ran Cheng
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  9. Jianfeng Gao
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  10. Junfeng Li
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  11. Bing Chen
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  12. Qing Luo
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Corresponding authors

Correspondence to Bing Chen or Qing Luo.

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Supporting information Figure S1, Tables SI–SIV. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Yu, H., Gong, T., Yuan, P. et al. Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes. Sci. China Inf. Sci. 66, 229403 (2023). https://doi.org/10.1007/s11432-021-3544-2

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  • DOI: https://doi.org/10.1007/s11432-021-3544-2

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