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Acknowledgements
This work was supported by National Key Research and Development Project (Grant No. 2018YFB2200500), National Natural Science Foundation of China (Grant Nos. 62025402, 62090033, 91964202, 92064003, 61874081, 62004149), and Key Research Project of Zhejiang Lab (Grant No. 2021MD0AC01).
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Appendixes A–D. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.
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Xiao, W., Peng, Y., Liu, Y. et al. Hf0.5Zr0.5O2 1T−1C FeRAM arrays with excellent endurance performance for embedded memory. Sci. China Inf. Sci. 66, 149401 (2023). https://doi.org/10.1007/s11432-022-3469-5
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DOI: https://doi.org/10.1007/s11432-022-3469-5