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Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks

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Abstract

The Hf0.5Zr0.5O2 (HZO)-based ferroelectric field-effect transistor (FeFET) synapse is a promising candidate for at-scale deep neural network (DNN) applications, because of its high symmetry, great accuracy and fast operation speed. However, the degradation of the remanent polarization (Pr) over time caused by the depolarization field has not been effectively resolved, greatly affecting the accuracy of the trained DNN. In this study, we demonstrate a ferroelectric (FE)-resistive switching (RS) switchable synapse using the FE mode for high-speed weight training and the RS mode for stable weight storage to overcome accuracy degradation. The FE-RS hybrid characteristic is accomplished by an HZO-based metal-ferroelectric-metal (MFM) capacitor with asymmetric electrodes, and the best FE endurance, as well as the most reliable RS behavior, is demonstrated by testing several electrodes materials. High memory windows are achieved in both FE and RS modes. Through this design, excellent accuracy is maintained over time, as verified by network simulation.

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Acknowledgements

This work was supported in part by National Key Research and Development Program of China (Grant No. 2017YFA0206102), National Natural Science Foundation of China (Grant Nos. 61922083, 61904200, 61974049), and Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000).

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Authors and Affiliations

  1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Pengfei Jiang, Jie Yu, Yannan Xu, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Tiancheng Gong, Yang Yang, Yan Wang & Qing Luo

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Pengfei Jiang, Jie Yu, Yannan Xu, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Tiancheng Gong, Yang Yang, Yan Wang & Qing Luo

  3. School of Microelectronics, Xidian University, Xi’an, 710071, China

    Kunran Xu

  4. Peng Cheng Laboratory, Shenzhen, 518000, China

    Qing Luo

Authors
  1. Pengfei Jiang
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  2. Kunran Xu
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  3. Jie Yu
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  4. Yannan Xu
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  5. Peng Yuan
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  6. Yuan Wang
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  7. Yuting Chen
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  8. Yaxin Ding
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  9. Shuxian Lv
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  10. Zhiwei Dang
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  11. Tiancheng Gong
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  12. Yang Yang
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  13. Yan Wang
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  14. Qing Luo
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Corresponding author

Correspondence to Qing Luo.

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Jiang, P., Xu, K., Yu, J. et al. Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks. Sci. China Inf. Sci. 66, 122409 (2023). https://doi.org/10.1007/s11432-022-3508-7

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  • DOI: https://doi.org/10.1007/s11432-022-3508-7

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