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Ultrahigh gain hot-electron tunneling transistor approaching the collection limit

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Acknowledgements

This work was supported by National Key Research and Development Program of Ministry of Science and Technology (Grant No. 2018YFA0703700), China National Funds for Distinguished Young Scientists (Grant No. 61925403), China National Funds for Outstanding Young Scientists (Grant No. 62122024), National Natural Science Foundation of China (Grant Nos. 12174094, 51872084, 62004065, 62104065), and Natural Science Foundation of Hunan Province (Grant Nos. 2021JJ20028, 2020JJ1002).

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Author notes

  1. Lin J and Luo P F have the same contribution to this work.

Authors and Affiliations

  1. Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, China

    Jun Lin & Bei Jiang

  2. State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China

    Jun Lin, Pengfei Luo, Xinpei Duan, Wujun Zhang, Chao Ma, Tong Bu, Wanhan Su, Guoli Li, Xuming Zou, Lei Liao & Xingqiang Liu

  3. School of Physics and Technology, Wuhan University, Wuhan, 430072, China

    Ting Yu

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  1. Jun Lin
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  2. Pengfei Luo
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  3. Xinpei Duan
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  10. Xuming Zou
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  11. Ting Yu
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  12. Lei Liao
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  13. Xingqiang Liu
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Corresponding authors

Correspondence to Bei Jiang, Lei Liao or Xingqiang Liu.

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Figures S1–S4. The supporting information is available online at https://info.scichina.com and https://link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Lin, J., Luo, P., Duan, X. et al. Ultrahigh gain hot-electron tunneling transistor approaching the collection limit. Sci. China Inf. Sci. 66, 169403 (2023). https://doi.org/10.1007/s11432-022-3537-1

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  • DOI: https://doi.org/10.1007/s11432-022-3537-1

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