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Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor

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Abstract

Surface acoustic wave (SAW) resonators with an ultrahigh Q-factor are designed and fabricated on silicon-based gallium nitride (GaN/Si). The temperature-dependent performance is characterized over a wide range, from 10 to 500 K. Finite element analysis is employed to guide the design of the SAW resonator from indications of the Rayleigh mode and weak propagation direction dependence of SAW in the c-plane of GaN/Si. The SAW resonator with 100 pairs of interdigital transducers (IDT), 100 pairs of grating reflectors (GR) for each side, aperture size of 80 µm, metallization ratio of 0.5, and electrode width of 500 nm resonates at 1.9133 GHz accordingly with an ultrahigh Q-factor of 7622 at room temperature, which contributes the fr × Qr, up to 14.583×1012 Hz. A resonator operating over 10 to 500 K indicates an approximately linear decreasing temperature dependence above 280 K while being approximately constant below 40 K. The fitting to resonator characteristics using the modified Butterworth Van Dyke (mBVD) model reveals a reduction in both the electrode and mechanical losses while worsening the dielectric loss with cooling down.

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References

  1. Shen J, Fu S, Su R, et al. High-performance surface acoustic wave devices using LiNbO3/SiO2/SiC multilayered substrates. IEEE Trans Microwave Theor Techn, 2021, 69: 3693–3705

    Article  Google Scholar 

  2. Delsing P, Cleland A N, Schuetz M J A, et al. The 2019 surface acoustic waves roadmap. J Phys D-Appl Phys, 2019, 52: 353001

    Article  Google Scholar 

  3. Li R, Reyes P I, Ragavendiran S, et al. Tunable surface acoustic wave device based on acoustoelectric interaction in ZnO/GaN heterostructures. Appl Phys Lett, 2015, 107: 073504

    Article  Google Scholar 

  4. Zhao P, Tiemann L, Trieu H K, et al. Acoustically driven Dirac electrons in monolayer graphene. Appl Phys Lett, 2020, 116: 103102

    Article  Google Scholar 

  5. Jandas P J, Luo J, Quan A, et al. Highly selective and label-free Love-mode surface acoustic wave biosensor for carcinoembryonic antigen detection using a self-assembled monolayer bioreceptor. Appl Surf Sci, 2020, 518: 146061

    Article  Google Scholar 

  6. Bui T H, Nguyen V, Vollebregt S, et al. Effect of droplet shrinking on surface acoustic wave response in microfluidic applications. Appl Surf Sci, 2017, 426: 253–261

    Article  Google Scholar 

  7. Fu Y Q, Pang H F, Torun H, et al. Engineering inclined orientations of piezoelectric films for integrated acoustofluidics and lab-on-a-chip operated in liquid environments. Lab Chip, 2021, 21: 254–271

    Article  Google Scholar 

  8. Takai T, Iwamoto H, Takamine Y, et al. High-performance saw resonator on new multilayered substrate using LiTaO3 Crystal. IEEE Trans Ultrason Ferroelect Freq Contr, 2017, 64: 1382–1389

    Article  Google Scholar 

  9. Su R, Shen J, Lu Z, et al. Wideband and low-loss surface acoustic wave filter based on 15° YX-LiNbO3/SiO2/Si structure. IEEE Electron Device Lett, 2021, 42: 438–441

    Article  Google Scholar 

  10. Zhang S, Lu R, Zhou H, et al. Surface acoustic wave devices using lithium niobate on silicon carbide. IEEE Trans Microwave Theor Techn, 2020, 68: 3653–3666

    Article  Google Scholar 

  11. Fu Y Q, Luo J K, Nguyen N T, et al. Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications. Prog Mater Sci, 2017, 89: 31–91

    Article  Google Scholar 

  12. Rinaldi M, Zuniga C, Chengjie Zuo C, et al. Super-high-frequency two-port AlN contour-mode resonators for RF applications. IEEE Trans Ultrason Ferroelect Freq Contr, 2010, 57: 38–45

    Article  Google Scholar 

  13. Zhang H, Yu S Y, Liu F K, et al. Using coupling slabs to tailor surface-acoustic-wave band structures in phononic crystals consisting of pillars attached to elastic substrates. Sci China-Phys Mech Astron, 2017, 60: 044311

    Article  Google Scholar 

  14. Neculoiu D, Bunea A C, Dinescu A M, et al. Band pass filters based on GaN/Si lumped-element SAW resonators operating at frequencies above 5 GHz. IEEE Access, 2018, 6: 47587–47599

    Article  Google Scholar 

  15. Kim N, Yu J, Zhang W, et al. Current trends in the development of normally-off GaN-on-Si power transistors and power modules: a review. J Elec Materi, 2020, 49: 6829–6843

    Article  Google Scholar 

  16. Sun R, Lai J, Chen W, et al. GaN power integration for high frequency and high efficiency power applications: a review. IEEE Access, 2020, 8: 15529–15542

    Article  Google Scholar 

  17. Ma C T, Gu Z H. Review of GaN HEMT applications in power converters over 500 W. Electronics, 2019, 8: 1401

    Article  Google Scholar 

  18. Li G, Li X, Liu X, et al. Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs. Appl Surf Sci, 2022, 597: 153709

    Article  Google Scholar 

  19. Zhao D, Wu Z, Duan C, et al. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Sci China Inf Sci, 2022, 65: 122401

    Article  Google Scholar 

  20. Bunea A C, Neculoiu D, Dinescu A. GaN/Si monolithic SAW lumped element resonator for C- and X-band applications. In: Proceedings of 2017 IEEE Asia Pacific Microwave Conference (APMC), Kuala Lumpur, 2017. 1010–1013

  21. Qamar A, Ghatge M, Tabrizian R, et al. Thermo-acoustic engineering of GaN SAW resonators for stable clocks in extreme environments. In: Proceedings of 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS), Vancouver, 2020. 1211–1214

  22. Ji X, Dong W X, Zhang Y M, et al. Fabrication and characterization of one-port surface acoustic wave resonators on semiinsulating GaN substrates. Chin Phys B, 2019, 28: 067701

    Article  Google Scholar 

  23. Ansari A, Tabrizian R, Rais-Zadeh M. A high-Q AlGaN/GaN phonon trap with integrated HEMT read-out. In: Proceedings of the 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Anchorage, 2015. 2256–2259

  24. Ansari A, Rais-Zadeh M. A temperature-compensated gallium nitride micromechanical resonator. IEEE Electron Device Lett, 2014, 35: 1127–1129

    Article  Google Scholar 

  25. Ansari A, Rais-Zadeh M. A thickness-mode AlGaN/GaN resonant body high electron mobility transistor. IEEE Trans Electron Devices, 2014, 61: 1006–1013

    Article  Google Scholar 

  26. Rais-Zadeh M, Zhu H S, Ansari A. Applications of gallium nitride in MEMS and acoustic microsystems. In: Proceedings of 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Phoenix, 2017. 9–11

  27. Ansari A, Rais-Zadeh M. Frequency-tunable current-assisted AlGaN/GaN acoustic resonators. In: Proceedings of 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS), Shanghai, 2016. 123–126

  28. Ansari A, Gokhale V J, Thakar V A, et al. Gallium nitride-on-silicon micromechanical overtone resonators and filters. In: Proceedings of International Electron Devices Meeting (IEDM), Washington, 2011

  29. Ansari A, Rais-Zadeh M. HEMT-based read-out of a thickness-mode AlGaN/GaN resonator. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), Washington, 2013. 18.3.1–18.3.4

  30. Zhu H S, Ansari A, Rais-Zadeh M. Lamb wave dispersion in gallium nitride micromechanical resonators. In: Proceedings of Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)], Toyama, 2016. 1–2

  31. Ansari A, Gokhale V J, Roberts J, et al. Monolithic integration of GaN-based micromechanical resonators and HEMTs for timing applications. In: Proceedings of 2012 International Electron Devices Meeting (IEDM), San Francisco, 2012

  32. Zhu H, Ansari A, Luo W, et al. Observation of acoustoelectric effect in micromachined Lamb wave delay lines with AlGaN/GaN heterostructure. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2016

  33. Ansari A. Gallium nitride integrated microsystems for radio frequency applications. Dissertation for Ph.D. Degree. Michigan: University of Michigan, 2016

    Google Scholar 

  34. Rais-Zadeh M, Gokhale V J, Ansari A, et al. Gallium nitride as an electromechanical material. J Microelectromech Syst, 2014, 23: 1252–1271

    Article  Google Scholar 

  35. Muller A, Neculoiu D, Konstantinidis G, et al. SAW devices manufactured on GaN/Si for frequencies beyond 5 GHz. IEEE Electron Device Lett, 2010, 31: 1398–1400

    Article  Google Scholar 

  36. Sun C, Wu F, Wallis D J, et al. Gallium nitride: a versatile compound semiconductor as novel piezoelectric film for acoustic tweezer in manipulation of cancer cells. IEEE Trans Electron Devices, 2020, 67: 3355–3361

    Article  Google Scholar 

  37. Qamar A, Eisner S R, Senesky D G, et al. Ultra-High-Q gallium nitride SAW resonators for applications with extreme temperature swings. J Microelectromech Syst, 2020, 29: 900–905

    Article  Google Scholar 

  38. Fletcher A S A, Nirmal D. A survey of gallium nitride HEMT for RF and high power applications. Superlattices Microstruct, 2017, 109: 519–537

    Article  Google Scholar 

  39. Morkoç H. Handbook of Nitride Semiconductors and Devices: Electronic and Optical Processes in Nitrides. Weinheim: Wiley, 2008

    Book  Google Scholar 

  40. Su R, Fu S, Shen J, et al. Enhanced performance of ZnO/SiO2/Al2O3 surface acoustic wave devices with embedded electrodes. ACS Appl Mater Interfaces, 2020, 12: 42378–42385

    Article  Google Scholar 

  41. Lu Z, Fu S, Chen Z, et al. High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO2/SiC structure. J Phys D-Appl Phys, 2020, 53: 305102

    Article  Google Scholar 

  42. Ruby R, Parker R, Feld D. Method of extracting unloaded Q applied across different resonator technologies. In: Proceedings of 2008 IEEE Ultrasonics Symposium, Beijing, 2008. 1815–1818

  43. Fu S, Wang W, Qian L, et al. High-frequency surface acoustic wave devices based on ZnO/SiC layered structure. IEEE Electron Device Lett, 2019, 40: 103–106

    Article  Google Scholar 

  44. Mandal D, Banerjee S. Surface acoustic wave (SAW) sensors: physics, materials, and applications. Sensors, 2022, 22: 820

    Article  Google Scholar 

  45. Takai T, Iwamoto H, Takamine Y, et al. High-performance SAW resonator with simplified LiTaO3/SiO2 double layer structure on Si substrate. IEEE Trans Ultrason Ferroelect Freq Contr, 2019, 66: 1006–1013

    Article  Google Scholar 

  46. Zhou C, Yang Y, Jin H, et al. Surface acoustic wave resonators based on (002)AlN/Pt/diamond/silicon layered structure. Thin Solid Films, 2013, 548: 425–428

    Article  Google Scholar 

  47. Zou J, Yantchev V, Iliev F, et al. Ultra-large-coupling and spurious-free SH0 plate acoustic wave resonators based on thin LiNbO3. IEEE Trans Ultrason Ferroelect Freq Contr, 2020, 67: 374–386

    Article  Google Scholar 

  48. Valle S, Singh M, Cryan M J, et al. High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices. Appl Phys Lett, 2019, 115: 212104

    Article  Google Scholar 

  49. Ahmed I, Rawat U, Chen J T, et al. GaN-on-SiC surface acoustic wave devices up to 14.3 GHz. In: Proceedings of IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS), Tokyo, 2022. 192–195

  50. Zhang H, Liang J, Zhou X, et al. Transverse mode spurious resonance suppression in Lamb wave mems resonators: theory, modeling, and experiment. IEEE Trans Electron Devices, 2015, 62: 3034–3041

    Article  Google Scholar 

  51. Zhang G G. Bulk and surface acoustic waves: fundamentals, devices, and applications. Singapore: Jenny Stanford Publishing Pte Ltd, 2022

    MATH  Google Scholar 

  52. Varshni Y P. Temperature dependence of the elastic constants. Phys Rev B, 1970, 2: 3952–3958

    Article  Google Scholar 

  53. Adachi K, Ogi H, Nagakubo A, et al. Elastic constants of GaN between 10 and 305 K. J Appl Phys, 2016, 119: 245111

    Article  Google Scholar 

  54. Roder C, Einfeldt S, Figge S, et al. Temperature dependence of the thermal expansion of GaN. Phys Rev B, 2005, 72: 085218

    Article  Google Scholar 

  55. Lin C M, Yantchev V, Zou J, et al. Micromachined one-port aluminum nitride Lamb wave resonators utilizing the lowest-order symmetric mode. J Microelectromech Syst, 2014, 23: 78–91

    Article  Google Scholar 

  56. Kropelnicki P, Muckensturm K M, Mu X J, et al. CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor. J Micromech Microeng, 2013, 23: 085018

    Article  Google Scholar 

  57. Uzunov I S, Terzieva M D, Nikolova B M, et al. Extraction of modified Butterworth — Van Dyke model of FBAR based on FEM analysis. In: Proceedings of 2017 XXVI International Scientific Conference Electronics (ET), Sozopol, 2017. 1–4

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Acknowledgements

This work was supported by National Key R&D Program (Grant Nos. 2020YFA0709800, 2021YFC3002200), National Basic Research Program of China (Grant No. 2015CB352101), National Natural Science Foundation of China (Grant Nos. 51861145202, U20A20168, 92064002), and Beijing Natural Science Foundation (Grant No. 4184091), Start-up Funding from Tsinghua University (Grant No. 533306001), Research Fund from Beijing Innovation Center for Future Chip, Independent Research Program of Tsinghua University (Grant No. 2014Z01006), Shenzhen Science and Technology Program (Grant No. JCYJ20150831192224146), Guangdong Province Key Field Research and Development Program (Grant No. 2019B010143002), and Tsinghua University Guoqiang Institute Grant.

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Authors and Affiliations

  1. School of Integrated Circuits, Tsinghua University, Beijing, 100084, China

    Guofang Yu, Renrong Liang, Haiming Zhao, Lei Xiao, Jie Cui, Yue Zhao, Wenpu Cui, Jing Wang, Jun Xu, Jun Fu & Tianling Ren

  2. Beijing National Research Center for Information Science Technology, Tsinghua University, Beijing, 100084, China

    Guofang Yu, Renrong Liang, Haiming Zhao, Lei Xiao, Jie Cui, Yue Zhao, Wenpu Cui, Jing Wang, Jun Xu, Jun Fu & Tianling Ren

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  1. Guofang Yu
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Correspondence to Renrong Liang or Jun Fu.

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Yu, G., Liang, R., Zhao, H. et al. Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor. Sci. China Inf. Sci. 67, 122402 (2024). https://doi.org/10.1007/s11432-022-3698-7

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  • DOI: https://doi.org/10.1007/s11432-022-3698-7

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