References
Xu J J, Zheng W, Huang F. Gallium oxide solar-blind ultraviolet photodetectors: a review. J Mater Chem C, 2019, 7: 8753–8770
Pearton S J, Yang J, CaryIv P H, et al. A review of Ga2O3 materials, processing, and devices. Appl Phys Rev, 2018, 5: 011301
Liang Y, Ma M R, Zhong X P, et al. Multilayered PdTe2/GaN heterostructures for visible-blind deep-ultraviolet photodetection. IEEE Electron Dev Lett, 2021, 42: 1192–1195
Xie C, Lu X T, Liang Y, et al. Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application. J Mater Sci Tech, 2021, 72: 189–196
Jo S H, Kang D H, Shim J, et al. A high-performance WSe2 / h-BN photodetector using a triphenylphosphine (PPh3)-based n-doping technique. Adv Mater, 2016, 28: 4824–4831
Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 61925110, U20A20207, 62004184, 62004186, 51961145110). This work was carried out in the Center for Micro and Nanoscale Research and Fabrication of USTC.
Author information
Authors and Affiliations
Corresponding authors
Additional information
Supporting information Appendixes A and B. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.
Rights and permissions
About this article
Cite this article
Zhang, Z., Tan, P., Hou, X. et al. Breaking the responsivity-speed dilemma of a-GaOx photodetector by alternating gate modulation. Sci. China Inf. Sci. 66, 229408 (2023). https://doi.org/10.1007/s11432-022-3754-x
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-022-3754-x