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Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor

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Abstract

Introducing magnetic order into topological insulator (TI) to break the time-reversal symmetry can yield numerous fascinating physical phenomena, which brings new hope for the emerging spintronic technology. The proximity effect is regarded as a promising strategy that could advance the step for realistic application by choosing a suitable ferromagnetic layer with the merits of high Curie temperature and high compatibility with mainstream semiconductor technology. Here, we prepare a Bi2Se3 thin film on Si-compatible ferromagnetic semiconductor (FMS) of MnxGe1−x by molecular beam epitaxy. After integration, the nonmagnetic Bi2Se3 exhibits an anomalous Hall signal and a clear weak localization cusp in magnetoresistance until 150 K, confirming that a high-temperature magnetism can be induced by the proximity effect. Detailed investigation of the magnetoconductance quantitatively indicates that the Bi2Se3 conductance suffers a transition from weak antilocalization to weak localization behavior after integrating with MnxGe1−x, and an 80 meV bandgap is predicted to be opened in the surface states in Bi2Se3 layer due to the proximity-induced magnetism. Our results prove that the proximity effect could be an important method to achieve topological magnetism at high temperatures, and reveals its potential for the manipulation of the topological surface states.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 62274009, 61774013), National Key R&D Program of China (Grant No. 2018YFB0407602), and International Collaboration Project (Grant No. B16001).

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Author notes

  1. Wang H T, Murata K, and Xie W R have the same contribution to this work.

Authors and Affiliations

  1. School of Integrated Circuit Science and Engineering and Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, 100191, China

    Hangtian Wang, Weiran Xie, Jing Li, Jie Zhang, Weisheng Zhao & Tianxiao Nie

  2. Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao, 266000, China

    Hangtian Wang, Weisheng Zhao & Tianxiao Nie

  3. Department of Electrical Engineering, University of California, Los Angeles, 90095, USA

    Koichi Murata & Kang L. Wang

Authors
  1. Hangtian Wang
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  2. Koichi Murata
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  3. Weiran Xie
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  4. Jing Li
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  5. Jie Zhang
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  6. Kang L. Wang
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Corresponding authors

Correspondence to Jie Zhang or Tianxiao Nie.

Additional information

Supporting information Appendixes A–D. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Wang, H., Murata, K., Xie, W. et al. Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor. Sci. China Inf. Sci. 66, 222403 (2023). https://doi.org/10.1007/s11432-023-3841-9

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  • DOI: https://doi.org/10.1007/s11432-023-3841-9

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