Conclusion
The direct current and radio frequency of DCGC-HEMT and DCTB-HEMT were systematically investigated. Owing to the utilization of a graded-AlGaN bottom barrier to provide more carriers and shield traps in the buffer, DCGC-HEMT exhibited greater saturated drain current and suppression in drain lag, enabling it to show greater output performance than DCTB-HEMT. The improvement in the former’s superior large-signal characteristic indicates its potential for high-performance RF PA applications.
References
Desmaris V, Rudzinski M, Rorsman N, et al. Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers. IEEE Trans Electron Dev, 2006, 53: 2413–2417
Bajaj S, Allerman A, Armstrong A, et al. High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm. IEEE Electron Dev Lett, 2018, 39: 256–259
Zhu J, Jing S, Ma X, et al. Improvement of electron transport property and on-resistance in normally-OFF Al2O3/AlGaN/GaN MOS-HEMTs using post-etch surface treatment. IEEE Trans Electron Dev, 2020, 67: 3541–3547
Chu R, Zhou Y, Liu J, et al. AlGaN-GaN double-channel HEMTs. IEEE Trans Electron Dev, 2005, 52: 438–446
Ando Y, Ishikura K, Yamanoguchi K, et al. Theoretical and experimental study of inverse piezoelectric effect in AlGaN/GaN field-plated heterostructure field-effect transistors. IEEE Trans Electron Dev, 2012, 59: 3350–3356
Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 62234009, 62090014, 62188102, 62104178, 62104179, 62104184), China Postdoctoral Science Foundation (Grant No. 2022T150505), Postdoctoral Fellowship Program of CPSF (Grant No. GZB20230557), Natural Science Basic Research Program of Shaanxi (Grant No. 2024JC-YBQN-0611), and Fundamental Research Funds for the Central Universities of China (Grant No. YJSJ23019).
Author information
Authors and Affiliations
Corresponding author
Additional information
Supporting information Appendix A. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.
Electronic supplementary material
Rights and permissions
About this article
Cite this article
Shi, C., Yang, L., Zhang, M. et al. Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci. China Inf. Sci. 67, 149401 (2024). https://doi.org/10.1007/s11432-023-3940-x
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-023-3940-x