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Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition

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In summary, our study has achieved successful growth of a ferroelectric Al0.65Sc0.35N film using the PVD method. The fabricated capacitors have demonstrated a coercive field of 2.70 MV/cm as well as an impressively large remnant polarization of 143 µC/cm2. Significantly, we have set a benchmark by achieving a remarkable 5 × 107 switching cycle without observable substantial degradation. This advancement represents a promising way to enhance fatigue resistance, which could push forward the practical applications of this technology in non-volatile, low-power, intelligent, and reconfigurable electronics.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 62025402, 62090033), Major Program of Zhejiang Natural Science Foundation (Grant No. DT23F0402), and Fundamental Research Funds for the Central Universities (Grant No. ZYTS23030).

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Authors and Affiliations

  1. School of Microelectronics, Xidian University, Xi’an, 710071, China

    Yang Li, Danyang Yao, Yan Liu, Zhi Jiang, Ruiqing Wang, Xu Ran & Genquan Han

  2. Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China

    Jiuren Zhou & Genquan Han

  3. Ultratrend Technologies Inc., Hangzhou, 311199, China

    Qikun Wang

  4. Emerging Device and Chip Laboratory, Institute of Technological Sciences, Wuhan University, Wuhan, 430072, China

    Guoqiang Wu

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  1. Yang Li
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  2. Danyang Yao
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  3. Yan Liu
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  4. Zhi Jiang
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  5. Ruiqing Wang
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  6. Xu Ran
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  7. Jiuren Zhou
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  9. Guoqiang Wu
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  10. Genquan Han
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Corresponding authors

Correspondence to Danyang Yao or Genquan Han.

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Li, Y., Yao, D., Liu, Y. et al. Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition. Sci. China Inf. Sci. 67, 159401 (2024). https://doi.org/10.1007/s11432-023-3960-6

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  • DOI: https://doi.org/10.1007/s11432-023-3960-6