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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

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Abstract

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here, we report a MoS2 channel-based phototransistor over an HfO2/n-Si substrate isolated by an hBN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and hBN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2 leads to modulation of MoS2 Fermi level due to electrostatic doping. Furthermore, the MoS2 also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating, photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2 · V−1 · s−1 results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 108 A · W−1, 0.72 × 106, and 6.20 × 1016 Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 62090030, 62090031, 62274145), Natural Science Foundation of Zhejiang Province, China (Grant No. LZ20F040001), National Key R&D Program of China (Grant No. 2021YFA1200502), and Fund of China Scholarship Council (CSC).

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Authors and Affiliations

  1. College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China

    Ali Imran, Jiwei Liu, Qinghai Zhu & Mingsheng Xu

  2. ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Hangzhou, 311200, China

    Ali Imran, Xin He & Fei Xue

  3. School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China

    Jiwei Liu & Deren Yang

  4. Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China

    Muhammad Sulaman

Authors
  1. Ali Imran
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  2. Xin He
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  3. Jiwei Liu
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  4. Qinghai Zhu
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  5. Muhammad Sulaman
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  6. Fei Xue
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Corresponding authors

Correspondence to Mingsheng Xu or Deren Yang.

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Supporting information Figures S1 and S2. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Imran, A., He, X., Liu, J. et al. Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric. Sci. China Inf. Sci. 67, 160403 (2024). https://doi.org/10.1007/s11432-024-3994-4

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  • DOI: https://doi.org/10.1007/s11432-024-3994-4

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